SOT323 Package Plastic Encapsulated Schottky Diode JSCJ RB715F Low Forward Voltage Component
Key Attributes
Model Number:
RB715F
Product Custom Attributes
Reverse Leakage Current (Ir):
1uA@10V
Non-Repetitive Peak Forward Surge Current:
200mA
Voltage - DC Reverse (Vr) (Max):
40V
Voltage - Forward(Vf@If):
370mV@1mA
Current - Rectified:
30mA
Mfr. Part #:
RB715F
Package:
SOT-323
Product Description
Product Overview
The JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD RB715F is a Schottky Barrier Diode in a SOT-323 plastic-encapsulated package. It features an extra-small power mold type, low forward voltage (VF), and high reliability, making it suitable for various electronic applications.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Model: RB715F
- Package Type: SOT-323
- Material: Plastic-Encapsulated
- Marking: 3D
Technical Specifications
| Parameter | Symbol | Limit/Test Conditions | Unit |
| Maximum Ratings | |||
| Peak reverse voltage | VRM | 40 | V |
| DC reverse voltage | VR | 40 | V |
| Non-repetitive Peak Forward Surge Current@t=8.3ms | IFSM | 200 | mA |
| Average forward current | IO | 30 | mA |
| Power dissipation | PD | 200 | mW |
| Junction temperature | Tj | 125 | |
| Storage temperature | Tstg | -55+~150 | |
| Electrical Characteristics | |||
| Reverse voltage leakage current | IR | VR=10V | 1 A |
| Forward voltage | VF | IF=1mA | 0.37 V |
| Capacitance between terminals | CT | VR=1V, f=1MHz | 2.0 pF |
| Thermal Resistance | |||
| Junction to Ambient | RJA | 500 | /W |
2410121242_JSCJ-RB715F_C77352.pdf
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