Low Leakage Schottky Barrier Diode JSCJ BAR43 with 30 Volt Peak Reverse Voltage and Plastic Package
Product Overview
The BAR43 series Schottky Barrier Diodes from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD are designed for general-purpose switching applications. They feature low current leakage and are available in SOT-23 plastic-encapsulated packages. These diodes offer reliable performance for various electronic circuits.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Package Type: SOT-23
- Encapsulation: Plastic
- Diode Type: Schottky Barrier Diode
Technical Specifications
| Model | Marking | Peak Repetitive Reverse Voltage (VRRM) | Working Peak Reverse Voltage (VRWM) | RMS Reverse Voltage (VR(RMS)) | Average Rectified Forward Current (IF(AV)) | Non-repetitive Peak Forward Surge Current (IFSM) @ t=8.3ms | Power Dissipation (PD) | Junction Temperature (Tj) | Storage Temperature (Tstg) | Reverse Voltage (V(BR)) @ IR=100A | Reverse Current (IR) @ VR=25V | Forward Voltage (VF) @ IF=2mA | Forward Voltage (VF) @ IF=15mA | Forward Voltage (VF) @ IF=100mA | Reverse Recovery Time (trr) @ IF=10mA, Irr=0.1IR, RL=100 | Capacitance (CT) @ f=1MHz |
| BAR43 | D95 | 30 V | 30 V | 21 V | 200 mA | 0.75 A | 200 mW | 125 | -55~+150 | 30 V | 0.5 A | 0.26 V | 0.45 V | 0.8 V | 5 ns | N/A |
| BAR43A | DB1 | 30 V | 30 V | 21 V | 200 mA | 0.75 A | 200 mW | 125 | -55~+150 | 30 V | 0.5 A | 0.33 V | 0.45 V | 0.8 V | 5 ns | N/A |
| BAR43C | DB2 | 30 V | 30 V | 21 V | 200 mA | 0.75 A | 200 mW | 125 | -55~+150 | 30 V | 0.5 A | 0.26 V | 0.45 V | 0.8 V | 5 ns | N/A |
| BAR43S | DA5 | 30 V | 30 V | 21 V | 200 mA | 0.75 A | 200 mW | 125 | -55~+150 | 30 V | 0.5 A | 0.26 V | 0.45 V | 0.8 V | 5 ns | N/A |
2410121252_JSCJ-BAR43_C77285.pdf
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.