Schottky barrier diode array JSCJ BAT54CDW with plastic encapsulated SOT363 package and low forward voltage drop
Product Overview
This document describes Schottky Barrier Diode Arrays from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, specifically models BAT54ADW /BAT54BRW / BAT54CDW /BAT54SDW /BAT54TW /BAT54DW/BAT54JW. These diodes feature a low forward voltage drop, fast switching speeds, and a small surface mount package (SOT-363). They are equipped with a PN junction guard ring for transient and ESD protection and are available in lead-free versions. These diodes are suitable for various electronic applications requiring efficient and fast switching.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Product Series: BAT54A/B/C/S/T/D/J
- Package: SOT-363
- Material: Plastic-Encapsulated
- Marking: Solid dot = Green molding compound device, if none, Solid dot = Pin1 indicate the normal device.
- Availability: Lead Free Version Available
Technical Specifications
| Model | Repetitive Peak Reverse Voltage (VRRM) | Peak Working Reverse Voltage (VRWM) | DC Blocking Voltage (VR) | Forward Continuous Current (IO) | Repetitive Peak Forward Current (IFRM) | Non-repetitive Peak Forward Surge Current (IFSM) @t=8.3ms | Power Dissipation (PD) | Thermal Resistance Junction To Ambient (RJA) | Junction Temperature (Tj) | Storage Temperature (Tstg) | Reverse Voltage (V(BR)) @IR=100A | Reverse Current (IR) @VR=25V | Forward Voltage (VF) @IF=1mA | Forward Voltage (VF) @IF=10mA | Forward Voltage (VF) @IF=30mA | Forward Voltage (VF) @IF=100mA | Total Capacitance (Ctot) @VR=1V,f=1MHz | Reverse Recovery Time (trr) @IF=10mA, IR=10mA, Irr=0.1xIR, RL=100 |
| BAT54ADW /BAT54BRW / BAT54CDW /BAT54SDW /BAT54TW /BAT54DW/BAT54JW | 30 V | 30 V | 30 V | 200 mA | 300 mA | 600 mA | 200 mW | 500 /W | 125 | -55~+150 | 30 V | 2 A | 320 mV | 400 mV | 500 mV | 1000 mV | 10 pF | 5 ns |
2410121236_JSCJ-BAT54CDW_C77319.pdf
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