Fast switching diode JSCJ BAS19W in SOT 323 package designed for performance in electronic circuits
Key Attributes
Model Number:
BAS19W
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2.5A
Reverse Leakage Current (Ir):
100nA@100V
Reverse Recovery Time (trr):
50ns
Operating Junction Temperature Range:
-
Voltage - DC Reverse (Vr) (Max):
100V
Diode Configuration:
Independent
Pd - Power Dissipation:
200mW
Voltage - Forward(Vf@If):
1.25V@200mA
Current - Rectified:
200mA
Mfr. Part #:
BAS19W
Package:
SOT-323-3
Product Description
Product Overview
The BAS19W/20W/21W series are high-performance switching diodes from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, designed for general-purpose switching applications. These diodes feature fast switching speeds and are housed in a surface mount SOT-323 package, making them ideally suited for automatic insertion processes. They offer high conductance and are available in different voltage ratings to suit various requirements.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Website: www.cj-elec.com
- Package Type: SOT-323
- Molding Compound: Green molding compound device (indicated by solid dot), otherwise normal device.
Technical Specifications
| Parameter | Symbol | BAS19W | BAS20W | BAS21W | Unit | Test Conditions |
| Peak Repetitive Reverse Voltage / DC Blocking Voltage | VRRM / VR | 100 | 150 | 250 | V | |
| Average Rectified Output Current | IO | 200 | mA | @Ta=25 | ||
| Power Dissipation | PD | 200 | mW | @Ta=25 | ||
| Thermal Resistance from Junction to Ambient | RJA | 625 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature Range | TSTG | -55~+150 | ||||
| Reverse breakdown voltage | V(BR) | 100 | 150 | 250 | V | IR= 100A |
| Reverse voltage leakage current | IR | 0.1 | A | VR=100V (BAS19W) | ||
| 0.1 | A | VR=150V (BAS20W) | ||||
| 0.1 | A | VR=200V (BAS21W) | ||||
| Forward voltage | VF | 1 | V | IF=100mA | ||
| 1.25 | V | IF=200mA | ||||
| Diode capacitance | CD | 5 | pF | VR=0V, f=1MHz | ||
| Reveres recovery time | trr | 50 | ns | IF=IR=30mA,Irr=0.1IR | ||
| Forward Surge Current Non-Repetitive Peak | IFSM | 2.5 | A | @t=8.3ms | ||
2409272301_JSCJ-BAS19W_C68961.pdf
Related Products
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
