General purpose switching diode JSCJ BAS16T featuring fast switching speed and compact SOT523 package
Key Attributes
Model Number:
BAS16T
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
1uA@75V
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-
Voltage - DC Reverse (Vr) (Max):
75V
Diode Configuration:
Independent
Pd - Power Dissipation:
200mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
150mA
Mfr. Part #:
BAS16T
Package:
SOT-523-3
Product Description
Product Overview
The MMBD4148T/BAS16T is a high-performance switching diode from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. Designed for general-purpose switching applications, it offers fast switching speeds and high conductance. This diode is encapsulated in a SOT-523 plastic package, making it suitable for various electronic circuits.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Model: MMBD4148T/BAS16T
- Package: SOT-523
- Marking: MMBD4148T:KA2, BAS16T:A2
- Color: Solid dot = Green molding compound device, if none, the normal device.
- Website: www.cj-elec.com
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
| Electrical Ratings @Ta=25 | ||||||
| Reverse breakdown voltage | V(BR) | 75 | V | IR=1A | ||
| Forward voltage | VF1 | 0.715 | V | IF=1mA | ||
| Forward voltage | VF2 | 0.855 | V | IF=10mA | ||
| Forward voltage | VF3 | 1.0 | V | IF=50mA | ||
| Forward voltage | VF4 | 1.25 | V | IF=150mA | ||
| Reverse current | IR1 | 1 | A | VR=75V | ||
| Reverse current | IR2 | 25 | nA | VR=20V | ||
| Capacitance between terminals | CT | 2 | pF | VR=0V,f=1MHz | ||
| Reverse recovery time | trr | 4 | ns | IF=IR=10mA Irr=0.1XIR,RL=100 | ||
| Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25 | ||||||
| Non-Repetitive Peak Reverse Voltage | VRM | 100 | V | |||
| Peak Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage | VRRM VRWM VR | 75 | V | |||
| RMS Reverse Voltage | VR(RMS) | 53 | V | |||
| Forward Continuous Current | IFM | 300 | mA | |||
| Average Rectified Output Current | IO | 150 | mA | |||
| Forward Surge Current @t=8.3ms | IFSM | 2.0 | A | |||
| Power Dissipation | Pd | 200 | mW | |||
| Thermal Resistance Junction to Ambient | RJA | /W | ||||
| Peak Junction Temperature | Tj | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
Package Outline Dimensions (SOT-523)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 0.700 | 0.900 | 0.028 | 0.035 |
| A1 | 0.000 | 0.100 | 0.000 | 0.004 |
| A2 | 0.700 | 0.800 | 0.028 | 0.031 |
| b1 | 0.150 | 0.250 | 0.006 | 0.010 |
| b2 | 0.250 | 0.350 | 0.010 | 0.014 |
| c | 0.100 | 0.200 | 0.004 | 0.008 |
| D | 1.500 | 1.700 | 0.059 | 0.067 |
| E | 0.700 | 0.900 | 0.028 | 0.035 |
| E1 | 1.450 | 1.750 | 0.057 | 0.069 |
| e | ||||
| e1 | 0.900 | 1.100 | 0.035 | 0.043 |
| L | 0.500 TYP. | 0.020 TYP. | ||
| L1 | 0.260 | 0.460 | 0.010 | 0.018 |
| 0 | 8 | 0 | 8 | |
| 0.400 REF. | 0.016 REF. | |||
Suggested Pad Layout (SOT-523)
(Image or diagram would typically be here, but cannot be generated from text alone)
2409272301_JSCJ-BAS16T_C68954.pdf
Related Products
Slkor BT151D-600R
Product Overview The BT151 Series are standard SCRs (Silicon Controlled Rectifiers) designed for various AC power control applications. They are suitable for use in washing machines, vacuums, massagers, solid-state relays, and AC motor speed regulation. Key Features: Sensitive Gate SCR Standard SCRs ...
Slkor DTC143ZCA
Product OverviewThe Digital Transistor DTC(R1R2 SERIES) is an epitaxial planar die construction NPN style digital transistor with built-in biasing resistors (R1R2). Complementary PNP types (DTA) are available. It is suitable for various applications and also offered in a lead-free version.Product ...
Power Switching N Channel Enhancement Mode Field Effect Transistor Slkor SL100N03 with Low Gate Charge
Product OverviewThe SL100N03 is an N-Channel Enhancement Mode Field Effect Transistor designed for power switching applications. It offers excellent package for good heat dissipation, ultra low gate charge, low reverse transfer capacitance, and fast switching capability. Avalanche energy is ...
Power MOSFET Slkor SL160N03R with 160A Continuous Drain Current and High Energy Pulse Resistance
Product OverviewThis Power MOSFET utilizes advanced TRENCH technology to minimize conduction loss, enhance switching performance, and provide superior resistance to high energy pulses in avalanche and commutation modes. It is designed for applications requiring efficient power management, including ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
