SOT 23 Package N Channel Enhancement Mode Field Effect Transistor JSCJ CJ3400 for High Density Cells
Key Attributes
Model Number:
CJ3400
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-
RDS(on):
52mΩ@2.5V,4A
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
77pF
Number:
1 N-channel
Output Capacitance(Coss):
66pF
Input Capacitance(Ciss):
1.05nF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
-
Mfr. Part #:
CJ3400
Package:
SOT-23
Product Description
Product Overview
The CJ3400 is an N-Channel Enhancement Mode Field Effect Transistor from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, designed for high-density cell applications. It offers extremely low RDS(ON) and exceptional on-resistance and maximum DC current capability, making it suitable for various electronic applications.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Product Code: CJ3400
- Package: SOT-23
- Encapsulation: Plastic
- Origin: China
- Date: Dec, 2010
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Off Characteristics | V(BR)DSS | VGS = 0V, ID =250A | 30 | V | ||
| IDSS | VDS =24V,VGS = 0V | 1 | A | |||
| IGSS | VGS =12V, VDS = 0V | 100 | nA | |||
| On characteristics | RDS(on) | VGS =10V, ID =5.8A | 35 | m | ||
| VGS =4.5V, ID =5A | 40 | m | ||||
| VGS =2.5V,ID=4A | 52 | m | ||||
| Forward tranconductance | gFS | VDS =5V, ID =5A | 8 | S | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A | 0.7 | 1.4 | V | |
| Dynamic Characteristics | Ciss | VDS =15V,VGS =0V,f =1MHz | 1050 | pF | ||
| Coss | VDS =15V,VGS =0V,f =1MHz | 99 | pF | |||
| Crss | VDS =15V,VGS =0V,f =1MHz | 77 | pF | |||
| Gate resistance | Rg | VDS =0V,VGS =0V,f =1MHz | 3.6 | |||
| Switching Characteristics | td(on) | VGS=10V,VDS=15V, RL=2.7,RGEN=3 | 5 | ns | ||
| tr | VGS=10V,VDS=15V, RL=2.7,RGEN=3 | 7 | ns | |||
| td(off) | VGS=10V,VDS=15V, RL=2.7,RGEN=3 | 40 | ns | |||
| tf | VGS=10V,VDS=15V, RL=2.7,RGEN=3 | 6 | ns | |||
| Diode forward voltage | VSD | IS=1A,VGS=0V | 1 | V | ||
| Maximum ratings | VDS | 30 | V | |||
| VGS | 12 | V | ||||
| ID | 5.8 | A | ||||
| IDM | 30 | A | ||||
| PD | 350 | mW | ||||
| TJ | 150 | |||||
| TSTG | -55 | +150 |
2410121650_JSCJ-CJ3400_C19019.pdf
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