Low Gate Charge and Excellent RDS ON P Channel Power MOSFET JSCJ CJAE10P06 for High Density Cell
Key Attributes
Model Number:
CJAE10P06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
10A
RDS(on):
35mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
515pF
Number:
1 P-Channel
Output Capacitance(Coss):
705pF
Pd - Power Dissipation:
3W
Input Capacitance(Ciss):
4.5nF
Gate Charge(Qg):
52nC@10V
Mfr. Part #:
CJAE10P06
Package:
DFNWB-8L-EP(3x3)
Product Description
Product Overview
The CJAE10P06 is a P-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for high-density cell applications, offering good stability, uniformity, and high EAS. The MOSFET features an excellent package for heat dissipation and is fully characterized for avalanche voltage and current.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Part Number: CJAE10P06
- Package Type: DFNWB33-8L
- Material: Plastic-Encapsulate MOSFETS
- Origin: China (implied by manufacturer location)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -60 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | -10 | A | |||
| Pulsed Drain Current | IDM | -40 | A | |||
| Single Pulsed Avalanche Energy | EAS | 180 | mJ | |||
| Power Dissipation | PD | 3.0 | W | |||
| Thermal Resistance from Junction to Ambient | RJA | Tc=25 | 42 | /W | ||
| Operating Junction and Storage Temperature Range | TJ ,Tstg | -55 | +150 | |||
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR) DSS | VGS = 0V, ID =-250A | -60 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-60V, VGS =0V | 300 | A | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| On Characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =-250A | -1.0 | -2.2 | -3.0 | V |
| Static drain-source on-state resistance | RDS(on) | VGS =-10V, ID =-10A | 26 | m | ||
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =-25V,VGS =0V, f =1MHz | 515 | pF | ||
| Output capacitance | Coss | 12 | ||||
| Reverse transfer capacitance | Crss | 15 | ||||
| Switching Characteristics | ||||||
| Total gate charge | Qg | VGS=-10V, VDS=-30V, ID=-10A | 35 | nC | ||
| Gate-source charge | Qgs | 12 | ||||
| Gate-drain charge | Qgd | 16 | ||||
| Turn-on delay time | td(on) | VDD=-30V,RG=3 RL=1.5,VGS=-10V, Rg f =1MHz | 18 | ns | ||
| Turn-on rise time | tr | 39 | ||||
| Turn-off delay time | td(off) | 44 | ||||
| Turn-off fall time | tf | |||||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=-1A | -1.2 | V | ||
| Continuous drain-source diode forward current | IS | -10 | A | |||
| Pulsed drain-source diode forward current | ISM | -40 | A | |||
2410121913_JSCJ-CJAE10P06_C2943210.pdf
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