Power Management Dual P Channel MOSFET JSCJ CJL2623 in Compact SOT 23 6L Package for Portable Devices
Key Attributes
Model Number:
CJL2623
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-
RDS(on):
180mΩ@4.5V,2A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
2 P-Channel
Output Capacitance(Coss):
-
Input Capacitance(Ciss):
240pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
4.5nC@4.5V
Mfr. Part #:
CJL2623
Package:
SOT-23-6
Product Description
CJL2623 Dual P-Channel MOSFET
The CJL2623 is a Dual P-Channel MOSFET in a SOT-23-6L package, designed for efficient power management in portable devices. It features TrenchFET technology for low on-resistance and low gate charge, making it ideal for DC/DC converters and load switching applications. This MOSFET is suitable for commercial and industrial use, offering reliable performance in a compact surface mount package.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Model: CJL2623
- Package: SOT-23-6L
- Material: Plastic-Encapsulate
- Origin: China
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | (Ta=25) | -3 | A | ||
| Pulsed Drain Current | IDM | (note 1) | -20 | A | ||
| Power Dissipation | PD | (note 2) | 0.35 | W | ||
| Thermal Resistance Junction to Ambient | RθJA | 357 | °C/W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature | TSTG | -55 | 150 | °C | ||
| ELECTRICAL CHARACTERISTICS | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250µA | -30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-30V,VGS = 0V | -1 | µA | ||
| Gate-body leakage current | IGSS | VGS =±20V, VDS = 0V | ±100 | nA | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =-250µA | -1 | -3 | V | |
| Drain-source on-resistance | RDS(on) | VGS =-10V, ID =-3A (note 3) | 130 | mΩ | ||
| Drain-source on-resistance | RDS(on) | VGS =-4.5V, ID =-2A (note 3) | 180 | mΩ | ||
| Forward tranconductance | gFS | VDS =-5V, ID =-2A (note 3) | 2 | S | ||
| Diode forward voltage | VSD | IS=-1A, VGS = 0V (note 3) | -1.2 | V | ||
| DYNAMIC PARAMETERS | ||||||
| Input Capacitance | Ciss | VDS =-25V,VGS =0V,f =1MHz (note 4) | 240 | pF | ||
| Output Capacitance | Coss | VDS =-25V,VGS =0V,f =1MHz (note 4) | 42 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =-25V,VGS =0V,f =1MHz (note 4) | 32 | pF | ||
| SWITCHING PARAMETERS | ||||||
| Turn-on delay time | td(on) | VDD=-15V,VGS=-10V,ID=-1A RD=15Ω,RG=3.3Ω (note 3,4) | 5 | ns | ||
| Turn-on rise time | tr | VDD=-15V,VGS=-10V,ID=-1A RD=15Ω,RG=3.3Ω (note 3,4) | 6 | ns | ||
| Turn-off delay time | td(off) | VDD=-15V,VGS=-10V,ID=-1A RD=15Ω,RG=3.3Ω (note 3,4) | 15 | ns | ||
| Turn-off fall time | tf | VDD=-15V,VGS=-10V,ID=-1A RD=15Ω,RG=3.3Ω (note 3,4) | 3 | ns | ||
| Total Gate Charge | Qg | VDS =-24V,VGS =-4.5V,ID=-2A (note 3,4) | 4.5 | nC | ||
| Gate-Source Charge | Qgs | VDS =-24V,VGS =-4.5V,ID=-2A (note 3,4) | 0.5 | nC | ||
| Gate-Drain Charge | Qg d | VDS =-24V,VGS =-4.5V,ID=-2A (note 3,4) | 1.4 | nC | ||
2410121321_JSCJ-CJL2623_C139831.pdf
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