N Channel Power MOSFET JSCJ CJAC1R3SN04C Featuring Low On Resistance and Robust Avalanche Energy Handling
Key Attributes
Model Number:
CJAC1R3SN04C
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
190A
RDS(on):
1.4mΩ@4.5V,30A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
65pF
Number:
1 N-channel
Output Capacitance(Coss):
1.85nF
Input Capacitance(Ciss):
5.31nF
Pd - Power Dissipation:
96W
Gate Charge(Qg):
78.5nC@10V
Mfr. Part #:
CJAC1R3SN04C
Package:
PDFNWB5x6-8L
Product Description
Product Overview
The CJAC1R3SN04C is an N-Channel enhancement mode power field-effect transistor utilizing SGT technology. This advanced technology is designed to minimize on-state resistance, offer superior switching performance, and withstand high energy pulses in avalanche and commutation modes. These devices are well-suited for high-efficiency, fast-switching applications.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Part Number: CJAC1R3SN04C
- Package: PDFNWB5x6-8L
- Marking: CJAC1R3SN04C
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| MAXIMUM RATINGS (TJ=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 40 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC=25°C | 190 | A | ||
| Pulsed Drain Current | IDM | 760 | A | |||
| Single Pulsed Avalanche Energy | EAS | VDD=20V,VGS=10V, L=0.5mH, Rg=25Ω Starting TJ= 25°C | 670 | mJ | ||
| Power Dissipation | PD | TC=25°C | 96 | W | ||
| Thermal Resistance from Junction to Ambient | RθJA | 62.5 | °C/W | |||
| Thermal Resistance from Junction to Case | RθJC | 1.3 | °C/W | |||
| Operating Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | °C | ||
| ELECTRICAL CHARACTERISTICS (TJ=25 unless otherwise specified) | ||||||
| Off characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =1mA | 40 | V | ||
| Zero gate voltage drain current | IDSS | VDS =32V, VGS =0V | 1.0 | 1.25 | µA | |
| Gate-body leakage current | IGSS | VDS =0V, VGS =±20V | ±100 | nA | ||
| On characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250µA | 1.0 | 1.6 | 2.5 | V |
| Static drain-source on-sate resistance | RDS(on) | VGS =10V, ID =30A | 1.0 | 1.4 | mΩ | |
| Static drain-source on-sate resistance | RDS(on) | VGS =4.5V, ID =30A | 1.4 | 2.0 | mΩ | |
| Dynamic characteristics | ||||||
| Input capacitance | Ciss | VDS =20V,VGS =0V, f = 100kHz | 5310 | pF | ||
| Output capacitance | Coss | 1850 | pF | |||
| Reverse transfer capacitance | Crss | 65 | pF | |||
| Switching characteristics | ||||||
| Total gate charge | Qg | VGS=10V, VDS=20V, ID=75A | 78.5 | nC | ||
| Gate-source charge | Qgs | 14.5 | nC | |||
| Gate-drain charge | Qgd | 15.7 | nC | |||
| Turn-on delay time | td(on) | VDS=20V, VGS=10V, RL=0.4Ω , Rg=2.5Ω | 6.2 | ns | ||
| Turn-on rise time | tr | 1.4 | ns | |||
| Turn-off delay time | td(off) | 22 | ns | |||
| Turn-off fall time | tf | 7.8 | ns | |||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=30A | 1.3 | V | ||
| Continuous drain-source diode forward current | IS | 190 | A | |||
| Pulsed drain-source diode forward current | ISM | 760 | A | |||
| Reverse recovery time | trr | diS/dt = 100A/μs, IS = 30A, VDD = 30V | 137 | ns | ||
| Reverse recovery charge | Qrr | 438 | nC | |||
2410121929_JSCJ-CJAC1R3SN04C_C19269023.pdf
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