N channel MOSFET with low voltage drive JSCJ 2SK3019 fast switching speed in compact SOT 523 package
Key Attributes
Model Number:
2SK3019
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100mA
Operating Temperature -:
-40℃~+150℃
RDS(on):
3.8Ω@4V;6Ω@2.5V
Gate Threshold Voltage (Vgs(th)):
1.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4pF
Number:
1 N-channel
Output Capacitance(Coss):
9pF
Input Capacitance(Ciss):
13pF
Pd - Power Dissipation:
150mW
Mfr. Part #:
2SK3019
Package:
SOT-523
Product Description
Product Overview
The 2SK3019 is an N-channel MOSFET in an SOT-523 package. It features low on-resistance, fast switching speed, and low voltage drive, making it ideal for portable equipment and easily designed drive circuits. It is also easy to parallel.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Origin: Not specified
- Material: Plastic-Encapsulate
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | VDS(BR)DSS | VGS = 0V, ID = 10A | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =30V,VGS = 0V | 1 | A | ||
| Gate Source leakage current | IGSS | VGS =20V, VDS = 0V | 2 | A | ||
| Gate Threshold Voltage | VGS(th) | VDS = 3V, ID =100A | 0.8 | 1.5 | V | |
| Drain-Source On-Resistance | RDS(on) | VGS = 4V, ID =10mA | 8 | |||
| Drain-Source On-Resistance | RDS(on) | VGS =2.5V,ID =1mA | 13 | |||
| Forward Transconductance | gFS | VDS =3V, ID = 10mA | 20 | mS | ||
| Input Capacitance | Ciss | VDS =5V,VGS =0V,f =1MHz | 13 | pF | ||
| Output Capacitance | Coss | VDS =5V,VGS =0V,f =1MHz | 9 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =5V,VGS =0V,f =1MHz | 4 | pF | ||
| Turn-On Delay Time | td(on) | VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500 | 15 | ns | ||
| Rise Time | tr | VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500 | 35 | ns | ||
| Turn-Off Delay Time | td(off) | VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500 | 80 | ns | ||
| Fall Time | tf | VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500 | 80 | ns |
2410121619_JSCJ-2SK3019_C504050.pdf
Related Products
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Versatile NPN transistor YTL BCW60D in SOT23 package suitable for multiple electronic applications
Product OverviewThe BCW60D is a general-purpose NPN bipolar transistor in a SOT-23 package, designed for various electronic applications. It offers reliable performance with key electrical characteristics such as breakdown voltages, current gain, and saturation voltages.Product AttributesTransistor ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
