Dual N Channel MOSFET JSCJ CJQ4828 featuring trench technology and low gate charge for power switching needs
Key Attributes
Model Number:
CJQ4828
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
4.5A
Operating Temperature -:
-40℃~+150℃
RDS(on):
77mΩ@4.5V,3A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
25pF
Number:
2 N-Channel
Input Capacitance(Ciss):
540pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
5.5nC@4.5V
Mfr. Part #:
CJQ4828
Package:
SOP-8
Product Description
Product Description
The CJQ4828 is a Dual N-Channel MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for load switch applications and PWM applications.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Product Code: CJQ4828
- Package: SOP8 Plastic-Encapsulate
- Marking: Q4828
- Green Molding Compound: Solid dot = Green molding compound device, if none, the normal device.
- Date Code: YY
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| STATIC PARAMETERS | Drain-source breakdown voltage | VGS = 0V, ID =250A | 60 | V | ||
| Zero gate voltage drain current | VDS =60V,VGS = 0V | 1 | A | |||
| Gate-body leakage current | VGS =20V, VDS = 0V | 100 | nA | |||
| Gate threshold voltage | VDS =VGS, ID =250A | 1 | 2.1 | 3 | V | |
| Drain-source on-resistance | VGS =10V, ID =4.5A | 40 | 56 | m | ||
| VGS =4.5V, ID =3A | 55 | 77 | m | |||
| Forward tranconductance | VDS =5V, ID =4.5A | 6 | S | |||
| Diode forward voltage | IS=1A, VGS = 0V | 1 | V | |||
| DYNAMIC PARAMETERS | Input Capacitance | VDS =30V,VGS =0V,f =1MHz | 540 | pF | ||
| Output Capacitance | VDS =30V,VGS =0V,f =1MHz | 60 | pF | |||
| Reverse Transfer Capacitance | VDS =30V,VGS =0V,f =1MHz | 25 | pF | |||
| SWITCHING PARAMETERS | Turn-on delay time | VGS=10V,VDS=30V, RL=6.7,RGEN=3 | 4.7 | ns | ||
| Turn-on rise time | VGS=10V,VDS=30V, RL=6.7,RGEN=3 | 2.3 | ns | |||
| Turn-off delay time | VGS=10V,VDS=30V, RL=6.7,RGEN=3 | 15.7 | ns | |||
| Turn-off fall time | VGS=10V,VDS=30V, RL=6.7,RGEN=3 | 1.9 | ns | |||
| Total Gate Charge (10V) | VDS =30V,VGS =10V,ID =4.5A | 10.5 | nC | |||
| Total Gate Charge (4.5V) | VDS =30V,VGS =4.5V,ID =3A | 5.5 | nC | |||
| Gate-Source Charge | VDS =30V,VGS =10V,ID =4.5A | 1.6 | nC | |||
| Gate-Drain Charge | VDS =30V,VGS =10V,ID =4.5A | 2.2 | nC | |||
| Maximum Ratings | Drain-Source Voltage | 60 | V | |||
| Gate-Source Voltage | 20 | V | ||||
| Continuous Drain Current (t 10s) | 4.5 | A | ||||
| Pulsed Drain Current | 20 | A | ||||
| Power Dissipation | 1.25 | W | ||||
| Junction Temperature | 150 | |||||
| Storage Temperature | -55 | 150 |
2410121333_JSCJ-CJQ4828_C80493.pdf
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