Surface Mount N Channel MOSFET JSCJ CJBA3134K DFN1006 3L Package for Battery Management Applications
Key Attributes
Model Number:
CJBA3134K
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
750mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
500mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.1V
Reverse Transfer Capacitance (Crss@Vds):
15pF
Number:
1 N-channel
Input Capacitance(Ciss):
120pF
Pd - Power Dissipation:
100mW
Mfr. Part #:
CJBA3134K
Package:
DFN-3L(1x0.6)
Product Description
Product Overview
The CJBA3134K is an N-Channel MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, featuring a DFN1006-3L plastic-encapsulated surface mount package. This lead-free product offers low RDS(on), operates at low logic level gate drive, and includes ESD protection. It is suitable for load/power switching, interfacing switching, battery management for ultra-small portable electronics, and logic level shifting.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China (implied by company name and website)
- Package: DFN1006-3L Plastic-Encapsulate
- Certifications: Lead Free Product is Acquired
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Type | Max | Unit |
| Static Characteristics | V(BR)DSS | VGS = 0V, ID =250A | 20 | V | ||
| IDSS | VDS =20V,VGS = 0V | 1 | A | |||
| IGSS | VGS =10V, VDS = 0V | 20 | A | |||
| VGS(th) | VDS =VGS, ID =250A | 0.35 | 0.75 | 1.1 | V | |
| RDS(on) | VGS =4.5V, ID =150mA | 250 | 500 | m | ||
| VGS =2.5V, ID =150mA | 300 | 700 | m | |||
| VGS =1.8V, ID =150mA | 370 | 900 | m | |||
| VGS =1.5V, ID =20mA | 460 | m | ||||
| VGS =1.2V, ID =10mA | 1200 | m | ||||
| gFS | VDS =10V, ID =150mA | 150 | mS | |||
| Dynamic Characteristics | Ciss | VDS=16V,VGS=0V,f=1MHz | 79 | 120 | pF | |
| Coss | 13 | 20 | pF | |||
| Crss | 9 | 15 | pF | |||
| Switching Characteristics | td(on) | VDS=10V,ID=500mA, VGS=4.5V,RG=10 | 6.7 | ns | ||
| tr | 4.8 | ns | ||||
| td(off) | 17.3 | ns | ||||
| tf | 7.4 | ns | ||||
| Source-Drain Diode | VSD | IS=0.15A, VGS = 0V | 1.2 | V | ||
| Absolute Maximum Ratings | VDS | 20 | V | |||
| ID | (note 1) | 0.75 | A | |||
| PD | (note 1) | 100 | mW |
2409300703_JSCJ-CJBA3134K_C504098.pdf
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