High Density Cell Design JSCJ CJAB35N03S Plastic Encapsulated Mosfet with Excellent Heat Dissipation
Key Attributes
Model Number:
CJAB35N03S
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
35A
RDS(on):
10mΩ@4.5V,10A
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
143pF
Number:
1 N-channel
Output Capacitance(Coss):
174pF
Input Capacitance(Ciss):
1.1nF
Pd - Power Dissipation:
25W
Gate Charge(Qg):
24nC@10V
Mfr. Part #:
CJAB35N03S
Package:
PDFNWB3.3x3.3-8L
Product Description
Product Overview
The CJAB35N03S is a Plastic-Encapsulated MOSFET utilizing advanced trench technology and design to achieve excellent RDS(ON) with low gate charge. Its high-density cell design offers ultra-low RDS(ON), and it is fully characterized for avalanche voltage and current with good stability and uniformity. The excellent package design ensures good heat dissipation, making it suitable for high-side switching in POL DC/DC converters and secondary-side synchronous rectification.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Part Number: CJAB35N03S
- Package Type: PDFNWB3.33.3-8L
- Marking: CJAB35N03S
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250uA | 30 | V | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS =24V, VGS =0V | 1.0 | A | ||
| On Characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250uA | 2.5 | V | ||
| Static drain-source on-sate resistance | RDS(on) | VGS =4.5V, ID =10A | 7.5 | m | ||
| Static drain-source on-sate resistance | RDS(on) | VGS =10V, ID =10A | 5.2 | 6.8 | m | |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =15V,VGS =0V, f =1MHz | 1100 | pF | ||
| Output capacitance | Coss | 174 | ||||
| Reverse transfer capacitance | Crss | 143 | ||||
| Switching Characteristics | ||||||
| Total gate charge | Qg | VGS=10V, VDS=15V, ID=10A | 24 | nC | ||
| Gate-source charge | Qgs | 2.6 | ||||
| Gate-drain charge | Qgd | 5.4 | ||||
| Turn-on delay time | td(on) | VDS=15V,ID=11A VGS=10V,RG=10 | 10 | ns | ||
| Turn-on rise time | tr | 25 | ||||
| Turn-off delay time | td(off) | 40 | ||||
| Turn-off fall time | tf | 90 | ||||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=12A | 1.2 | V | ||
| Continuous drain-source diode forward current | IS | 35 | A | |||
| Pulsed drain-source diode forward current | ISM | 120 | A | |||
| Absolute Maximum Ratings | ||||||
| Parameter | Symbol | Value | Unit | |||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | 35 | A | |||
| Pulsed Drain Current | IDM | 120 | A | |||
| Single Pulsed Avalanche Energy | EAS | 83.3 | mJ | |||
| Maximum Power Dissipation | PD | 25 | W | |||
| Thermal Resistance from Junction to Ambient | RJA | 50 | /W | |||
| Thermal Resistance from Junction to Case | RJC | 5.0 | /W | |||
| Operating Junction and Storage Temperature Range | TJ ,Tstg | -55~+150 | ||||
2410121908_JSCJ-CJAB35N03S_C19267720.pdf
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