P Channel MOSFET SOT 23 Package Featuring JSCJ CJ3415 R15 Suitable for Load Switching Applications
Key Attributes
Model Number:
CJ3415 R15
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4A
RDS(on):
50mΩ@4.5V,4A
Gate Threshold Voltage (Vgs(th)):
1V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
160pF
Number:
1 P-Channel
Output Capacitance(Coss):
205pF
Input Capacitance(Ciss):
1.45nF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
17.2nC@4.5V
Mfr. Part #:
CJ3415 R15
Package:
SOT-23
Product Description
CJ3415 P-Channel MOSFET
The CJ3415 is a P-Channel MOSFET in a SOT-23 package, designed for load switching and PWM applications. It features excellent RDS(ON), low gate charge, and low gate voltages, making it suitable for efficient power management.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Package Type: SOT-23
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | ±8 | V | |||
| Continuous Drain Current (t≤10s) | ID | -4.0 | A | |||
| Maximum Power Dissipation (t≤10s) | PD | 0.35 | W | |||
| Thermal Resistance from Junction to Ambient | RθJA | 357 | °C/W | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature | TSTG | -55 | ~+150 | °C | ||
| Static Parameters (Ta=25 °C unless otherwise specified) | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250µA | -20 | V | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =-250µA | -0.3 | -0.56 | -1 | V |
| Gate-body leakage current | IGSS | VDS =0V, VGS =±8V | ±10 | ±1 | µA | |
| Zero gate voltage drain current | IDSS | VDS =-16V, VGS =0V | -1 | µA | ||
| Drain-source on-state resistance(note1) | RDS(on) | VGS =-4.5V, ID =-4A | 0.037 | 0.050 | Ω | |
| VGS =-2.5V, ID =-4A | 0.045 | 0.060 | ||||
| VGS =-1.8V, ID =-2A | 0.056 | 0.073 | ||||
| Forward transconductance(note2) | gFS | VDS =-5V, ID =-4A | 8 | S | ||
| Body diode voltage(note2) | VSD | IS=-1A,VGS =0V | -1 | V | ||
| Dynamic Parameters (note3) | ||||||
| Input capacitance | Ciss | VDS =-10V,VGS =0V,f =1MHz | 1450 | pF | ||
| Output capacitance | Coss | 205 | ||||
| Reverse transfer capacitance | Crss | 160 | ||||
| Gate resistance | Rg | VDS =0V,VGS =0V,f =1MHz | 6.5 | Ω | ||
| Switching Parameters (note3) | ||||||
| Total gate charge | Qg | VDS =-10V,VGS =-4.5V,ID =-4A | 17.2 | nC | ||
| Gate-Source charge | Qgs | 1.3 | ||||
| Gate-drain charge | Qgd | 4.5 | ||||
| Turn-on delay time(note3) | td(on) | VDS=-10V, VGS=-4.5V RGEN =3Ω, RL=2.5Ω | 9.5 | ns | ||
| Turn-on rise time(note3) | tr | 17 | ||||
| Turn-off delay time(note3) | td(off) | 94 | ||||
| Turn-off fall time(note3) | tf | 35 | ||||
2410121342_JSCJ-CJ3415-R15_C77896.pdf
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