Super Fast Recovery Rectifier Diode JSCJ ES1DF Featuring 1 Amp Average Forward Current SMAF Package
Key Attributes
Model Number:
ES1DF
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
30A
Reverse Leakage Current (Ir):
5uA@200V
Reverse Recovery Time (trr):
35ns
Voltage - DC Reverse (Vr) (Max):
200V
Diode Configuration:
Independent
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Voltage - Forward(Vf@If):
950mV@1A
Current - Rectified:
1A
Mfr. Part #:
ES1DF
Package:
DO-214AD
Product Description
Product Overview
The ES1AF through ES1JF series are Super Fast Recovery Rectifier Diodes designed for high-speed rectification applications. They offer high surge current capability and are available in SMAF packages. These diodes are suitable for general rectifier applications.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Product Line: ES1 Series
- Package: SMAF (Plastic-Encapsulate Diodes)
- Marking: ES1X X : From A To J
- Polarity: Color band denotes cathode
Technical Specifications
| Item | Symbol | Unit | Test Conditions | ES1AF/BF/CF/DF | ES1EF/GF/HF/JF |
| Repetitive Peak Reverse Voltage | VRRM | V | 50 | 600 | |
| Average Forward Current | IF(AV) | A | 1.0 | ||
| Surge(Non-repetitive)Forward Current | IFSM | A | 60Hz Half-sine wave, 1 cycle, Ta=25 | 30 | |
| Peak Forward Voltage | VF | V | IF =1.0A | 0.95 - 1.25 | |
| Maximum reverse recovery time | trr | ns | IF=0.5A,IR=1.0A,Irr=0.1*IR | 35 | |
| Peak Reverse Current | IRRM1 | A | VRM=VRRM, Tj=25 | 100 | |
| Peak Reverse Current | IRRM2 | A | VRM=VRRM, Tj=100 | 150 | |
| Maximum RMS Voltage | VRMS | V | 35 - 420 | ||
| Thermal Resistance(Typical) | R J-A | /W | Junction to ambient (on P.C.B. with 0.2" x 0.2" copper pad) | 85 | |
| Thermal Resistance(Typical) | R J-L | /W | Junction to lead | 35 | |
| Operation Junction and Storage Temperature Range | TJ,TSTG | -55 ~ +150 | |||
2410121810_JSCJ-ES1DF_C2923905.pdf
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