Power MOSFET JSCJ CJQ4406A Featuring Low RDS ON and Ultra Low Gate Resistance for Switching Circuits
Key Attributes
Model Number:
CJQ4406A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8.3mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
121pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
1.28nF@15V
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
21.6nC@10V
Mfr. Part #:
CJQ4406A
Package:
SOP-8
Product Description
Product Overview
The CJQ4406A is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), superior shoot-through immunity, robust body diode characteristics, and ultra-low gate resistance. This device is ideal for low-side switching applications in Notebook CPU core power conversion.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Device Code: CJQ4406A
- Package: SOP8 Plastic-Encapsulate
- Color: Normal device (if no green molding compound)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | VGS = 0V, ID =250uA | 30 | V | ||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25°C | 10 | A | ||
| Pulsed Drain Current | IDM | Limited only by maximum temperature allowed | 40 | A | ||
| Single Pulsed Avalanche Energy | EAS | VDD=15V,VGS=10V, L=0.5mH, Rg=25Ω Starting TJ= 25°C | 70 | mJ | ||
| Power Dissipation | PD | TA=25°C, Device mounted on 1 in² FR-4 board with 2oz. single-sided Copper, in a still air environment | 2.5 | W | ||
| Thermal Resistance from Junction to Ambient | RθJA | Device mounted on 1 in² FR-4 board with 2oz. single-sided Copper, in a still air environment | 50 | °C/W | ||
| Operating Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | °C | ||
| Gate-threshold Voltage | VGS(th) | VDS =VGS, ID =250µA | 1.0 | 2.0 | 3.0 | V |
| Static drain-source on-sate resistance | RDS(on) | VGS =10V, ID =10A | 8.3 | mΩ | ||
| Static drain-source on-sate resistance | RDS(on) | VGS =4.5V, ID =5A | 10.8 | mΩ | ||
| Zero gate voltage drain current | IDSS | VDS =30V, VGS =0V | 1.0 | µA | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =±20V | ±100 | nA | ||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=10A | 1.2 | V | ||
| Continuous drain-source diode forward current | IS | 10 | A | |||
| Pulsed drain-source diode forward current | ISM | 40 | A | |||
| Input capacitance | Ciss | VDS =15V,VGS=0V, f =1MHz | 1280 | pF | ||
| Output capacitance | Coss | VDS =15V,VGS=0V, f =1MHz | 177 | pF | ||
| Reverse transfer capacitance | Crss | VDS =15V,VGS=0V, f =1MHz | 121 | pF | ||
| Total gate charge | Qg | VGS=10V, VDS=15V, ID=10A | 10.7 | nC | ||
| Total gate charge | Qg | VGS=4.5V, VDS=15V, ID=10A | 21.6 | nC | ||
| Gate-source charge | Qgs | VGS=10V, VDS=15V, ID=10A | 3.8 | nC | ||
| Gate-drain charge | Qgd | VGS=10V, VDS=15V, ID=10A | 4.1 | nC | ||
| Turn-on delay time | td(on) | VDS=15V, VGS=10V, RL=5.26Ω , Rg=10Ω | 10.7 | ns | ||
| Turn-on rise time | tr | VDS=15V, VGS=10V, RL=5.26Ω , Rg=10Ω | 3.8 | ns | ||
| Turn-off delay time | td(off) | VDS=15V, VGS=10V, RL=5.26Ω , Rg=10Ω | 4.1 | ns | ||
| Turn-off fall time | tf | VDS=15V, VGS=10V, RL=5.26Ω , Rg=10Ω | 4.9 | ns | ||
| Gate resistance | Rg | f =1MHz | 15 | Ω |
Applications
- Battery Switch
- Load Switch
2410121919_JSCJ-CJQ4406A_C7543671.pdf
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