Medium Current Zener Diode JSCJ BZT52C5V1S with Planar Die Construction and 200mW Power Dissipation
Key Attributes
Model Number:
BZT52C5V1S
Product Custom Attributes
Operating Junction Temperature Range:
-55℃~+150℃
Impedance(Zzt):
60Ω
Diode Configuration:
Independent
Zener Voltage(Range):
4.8V~5.4V
Pd - Power Dissipation:
200mW
Zener Voltage(Nom):
5.1V
Mfr. Part #:
BZT52C5V1S
Package:
SOD-323
Product Description
Product Overview
The BZT52C2V4S-BZT52C43S series is a range of Zener diodes in a SOD-323 package. These diodes feature planar die construction and are designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and offer 200mW power dissipation on a ceramic PCB. Lead-free versions are available.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Package: SOD-323
- Material: Plastic-Encapsulate Diodes
- Color: Green molding compound device (if marked with solid dot)
- Origin: China
Technical Specifications
| Type | Marking | Zener Voltage Range (Note 2) Nom(V) | Zener Voltage Range (Note 2) Min(V) | Zener Voltage Range (Note 2) Max(V) | Test Current IZT (mA) | Maximum Zener Impedance ZZT@IZT () | Maximum Reverse Current IR @ VR (A) | Typical Temperature Coefficient @IZTC (mV/) | Forward Voltage (Note 2) @ IF = 10mA VF (V) | Power Dissipation(Note 1) PD (mW) | Operation Junction and Storage Temperature Range TJ,Tstg () |
| BZT52C2V4S | WX | 2.4 | 2.20 | 2.60 | 5 | 100 | 50 | -3.5 | 0.9 | 200 | -55~+150 |
| BZT52C2V7S | W1 | 2.7 | 2.5 | 2.9 | 5 | 100 | 20 | -3.5 | 0.9 | 200 | -55~+150 |
| BZT52C3V0S | W2 | 3.0 | 2.8 | 3.2 | 5 | 95 | 10 | -3.5 | 0.9 | 200 | -55~+150 |
| BZT52C3V3S | W3 | 3.3 | 3.1 | 3.5 | 5 | 95 | 5 | -3.5 | 0.9 | 200 | -55~+150 |
| BZT52C3V6S | W4 | 3.6 | 3.4 | 3.8 | 5 | 90 | 5 | -3.5 | 0.9 | 200 | -55~+150 |
| BZT52C3V9S | W5 | 3.9 | 3.7 | 4.1 | 5 | 90 | 3 | -3.5 | 0.9 | 200 | -55~+150 |
| BZT52C4V3S | W6 | 4.3 | 4.0 | 4.6 | 5 | 90 | 3 | -3.5 | 0.9 | 200 | -55~+150 |
| BZT52C4V7S | W7 | 4.7 | 4.4 | 5.0 | 5 | 80 | 3 | -3.5 | 0.9 | 200 | -55~+150 |
| BZT52C5V1S | W8 | 5.1 | 4.8 | 5.4 | 5 | 60 | 2 | -2.7 | 0.9 | 200 | -55~+150 |
| BZT52C5V6S | W9 | 5.6 | 5.2 | 6.0 | 5 | 40 | 1 | -2 | 0.9 | 200 | -55~+150 |
| BZT52C6V2S | WA | 6.2 | 5.8 | 6.6 | 5 | 10 | 3 | 0.4 | 0.9 | 200 | -55~+150 |
| BZT52C6V8S | WB | 6.8 | 6.4 | 7.2 | 5 | 15 | 2 | 1.2 | 0.9 | 200 | -55~+150 |
| BZT52C7V5S | WC | 7.5 | 7.0 | 7.9 | 5 | 15 | 1 | 2.5 | 0.9 | 200 | -55~+150 |
| BZT52C8V2S | WD | 8.2 | 7.7 | 8.7 | 5 | 15 | 0.7 | 3.2 | 0.9 | 200 | -55~+150 |
| BZT52C9V1S | WE | 9.1 | 8.5 | 9.6 | 5 | 15 | 0.5 | 3.8 | 0.9 | 200 | -55~+150 |
| BZT52C10S | WF | 10 | 9.4 | 10.6 | 5 | 20 | 0.2 | 4.5 | 0.9 | 200 | -55~+150 |
| BZT52C11S | WG | 11 | 10.4 | 11.6 | 5 | 20 | 0.1 | 5.4 | 0.9 | 200 | -55~+150 |
| BZT52C12S | WH | 12 | 11.4 | 12.7 | 5 | 25 | 0.1 | 6.0 | 0.9 | 200 | -55~+150 |
| BZT52C13S | WI | 13 | 12.4 | 14.1 | 5 | 30 | 0.1 | 7.0 | 0.9 | 200 | -55~+150 |
| BZT52C15S | WJ | 15 | 13.8 | 15.6 | 5 | 30 | 0.1 | 9.2 | 0.9 | 200 | -55~+150 |
| BZT52C16S | WK | 16 | 15.3 | 17.1 | 5 | 40 | 0.1 | 10.4 | 0.9 | 200 | -55~+150 |
| BZT52C18S | WL | 18 | 16.8 | 19.1 | 5 | 45 | 0.1 | 12.4 | 0.9 | 200 | -55~+150 |
| BZT52C20S | WM | 20 | 18.8 | 21.2 | 5 | 55 | 0.1 | 14.4 | 0.9 | 200 | -55~+150 |
| BZT52C22S | WN | 22 | 20.8 | 23.3 | 5 | 55 | 0.1 | 16.4 | 0.9 | 200 | -55~+150 |
| BZT52C24S | WO | 24 | 22.8 | 25.6 | 5 | 70 | 0.1 | 18.4 | 0.9 | 200 | -55~+150 |
| BZT52C27S | WP | 27 | 25.1 | 28.9 | 2 | 80 | 0.1 | 21.4 | 0.9 | 200 | -55~+150 |
| BZT52C30S | WQ | 30 | 28.0 | 32.0 | 2 | 80 | 0.1 | 24.4 | 0.9 | 200 | -55~+150 |
| BZT52C33S | WR | 33 | 31.0 | 35.0 | 2 | 80 | 0.1 | 27.4 | 0.9 | 200 | -55~+150 |
| BZT52C36S | WS | 36 | 34.0 | 38.0 | 2 | 90 | 0.1 | 30.4 | 0.9 | 200 | -55~+150 |
| BZT52C39S | WT | 39 | 37.0 | 41.0 | 2 | 130 | 0.1 | 33.4 | 0.9 | 200 | -55~+150 |
| BZT52C43S | WU | 43 | 40.0 | 46.0 | 2 | 100 | 0.1 | 10.0 | 0.9 | 200 | -55~+150 |
Notes:
1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2.
2. Short duration test pulse used to minimize self-heating effect.
3. f = 1kHz.
2111101730_JSCJ-BZT52C5V1S_C2910089.pdf
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