Low voltage low inductance Schottky Barrier Diode JSCJ RB500V-40 ideal for power supply rectification
Key Attributes
Model Number:
RB500V-40
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
1A
Reverse Leakage Current (Ir):
1uA@10V
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
45V
Voltage - Forward(Vf@If):
450mV@10mA
Current - Rectified:
100mA
Mfr. Part #:
RB500V-40
Package:
SOD-323
Product Description
Product Overview
The RB500V-40 is a Schottky Barrier Diode from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, designed for low current rectification. It features low voltage and low inductance, making it suitable for power supply applications.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Package Type: SOD-323 Plastic-Encapsulate
- Marking: Bar indicates the cathode. Solid dot = Green molding compound device, if none, the normal device.
Technical Specifications
| Parameter | Symbol | Limit/Value | Unit | Conditions |
| Maximum Ratings and Electrical Characteristics, Single Diode | ||||
| Peak reverse voltage | VRM | 45 | V | @Ta=25 |
| DC reverse voltage | VR | 40 | V | @Ta=25 |
| Mean rectifying current | IO | 0.1 | A | @Ta=25 |
| Non-repetitive Peak Forward Surge Current | IFSM | 1 | A | @t=8.3ms |
| Electrical Ratings | ||||
| Forward voltage | VF | 0.45 | V | IF=10mA @Ta=25 |
| Reverse current | IR | 1 | µA | VR=10V @Ta=25 |
| Capacitance between terminals | CT | 6 | pF | VR=10V, f=1MHz @Ta=25 |
| General Parameters | ||||
| Junction temperature | Tj | 125 | ||
| Storage temperature | Tstg | -55~+150 | ||
| Power dissipation | PD | 200 | mW | @Ta=25 |
| Thermal Resistance Junction to Ambient | RθJA | 500 | /W | |
2410121252_JSCJ-RB500V-40_C77346.pdf
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