Low Resistance P Channel Power MOSFET JSCJ CJQ13P04 Suitable for Load Switch and Battery Protection
Key Attributes
Model Number:
CJQ13P04
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
13A
Operating Temperature -:
-55℃~+150℃
RDS(on):
11mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
176pF
Number:
1 P-Channel
Output Capacitance(Coss):
262pF
Input Capacitance(Ciss):
2.626nF
Pd - Power Dissipation:
4W
Gate Charge(Qg):
22.2nC@4.5V
Mfr. Part #:
CJQ13P04
Package:
SOP-8
Product Description
Product Overview
The CJQ13P04 is a P-Channel Power MOSFET featuring advanced trench technology and a low-resistance package, offering extremely low RDS(ON). It is ideally suited for battery protection and load switch applications.
Product Attributes
- Device Code: Q13P04
- Marking: Q13P04 XX
- Molding Compound: Green (if solid dot present)
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -40 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | -13 | A | |||
| Pulsed Drain Current | IDM | -52 | A | |||
| Single Pulsed Avalanche Energy | EAS | 230 | mJ | |||
| Power Dissipation | PD | 4.0 | W | |||
| Thermal Resistance from Junction to Ambient | RθJA | 31.25 | °C/W | |||
| Operating Junction and Storage Temperature Range | TJ ,Tstg | -55 | +150 | °C | ||
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250µA | -40 | V | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =±20V | ±100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS =-32V, VGS =0V | -1.0 | µA | (TJ=25°C) | |
| -100 | µA | (TJ=125°C) | ||||
| On Characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =-250µA | -1.0 | -1.5 | -2.5 | V |
| Static drain-source on-state resistance | RDS(on) | VGS =-10V, ID =-10A | 11 | 15 | mΩ | |
| VGS =-4.5V, ID =-8A | 14.5 | 22 | mΩ | |||
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =-25V,VGS =0V, f =1MHz | 262 | 298 | pF | |
| Output capacitance | Coss | 176 | 211 | pF | ||
| Reverse transfer capacitance | Crss | 26 | 39 | pF | ||
| Switching Characteristics | ||||||
| Total gate charge | Qg | VGS=-4.5V, VDS=-32V, ID=-10A | 22.2 | nC | ||
| Gate-source charge | Qgs | 8.2 | nC | |||
| Gate-drain charge | Qgd | 8.8 | nC | |||
| Turn-on delay time | td(on) | VDS=-20V,ID=-1A VGS=-10V,RG=6Ω | 23 | ns | ||
| Turn-on rise time | tr | 10 | ns | |||
| Turn-off delay time | td(off) | 135 | ns | |||
| Turn-off fall time | tf | 46 | ns | |||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=-1A | -1.2 | V | ||
| Continuous drain-source diode forward current | IS | -13 | A | |||
| Pulsed drain-source diode forward current | ISM | -52 | A | |||
2504101957_JSCJ-CJQ13P04_C504129.pdf
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