86--136 6733 2386
quality Planar Die Construction Plastic Encapsulate Zener Diode SOD123 Package JSCJ BZT52B15 Suitable for Automated Assembly factory
quality Planar Die Construction Plastic Encapsulate Zener Diode SOD123 Package JSCJ BZT52B15 Suitable for Automated Assembly factory

Planar Die Construction Plastic Encapsulate Zener Diode SOD123 Package JSCJ BZT52B15 Suitable for Automated Assembly

Key Attributes
Model Number: BZT52B15
Product Custom Attributes
Impedance(Zzt):
30Ω
Diode Configuration:
Independent
Zener Voltage(Range):
14.7V~15.3V
Pd - Power Dissipation:
350mW
Zener Voltage(Nom):
15V
Impedance(Zzk):
200Ω
Mfr. Part #:
BZT52B15
Package:
SOD-123
Product Description

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes

The BZT52B2V4-BZT52B43 series are Zener diodes featuring planar die construction and 350mW power dissipation on a ceramic PCB. They are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. Lead-free versions are available.

Product Attributes

  • Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
  • Product Type: Zener Diode
  • Package: SOD-123
  • Construction: Planar Die
  • Material: Plastic-Encapsulate
  • Certifications: Available in Lead Free Version

Technical Specifications

Type Number Type Code VZ Nom(V) VZ Min(V) VZ Max(V) IZT(mA) ZZT@IZT() IZK(mA) IR(A) VZ, mV/C
BZT52B2V4 2WX 2.4 2.35 2.45 5 100 1.0 50 -3.5
BZT52B2V7 2W1 2.7 2.65 2.75 5 100 1.0 20 -3.5
BZT52B3V0 2W2 3.0 2.94 3.06 5 95 1.0 10 -3.5
BZT52B3V3 2W3 3.3 3.23 3.37 5 95 1.0 5 -3.5
BZT52B3V6 2W4 3.6 3.53 3.67 5 90 1.0 5 -3.5
BZT52B3V9 2W5 3.9 3.82 3.98 5 90 1.0 3 -3.5
BZT52B4V3 2W6 4.3 4.21 4.39 5 90 1.0 3 -3.5
BZT52B4V7 2W7 4.7 4.61 4.79 5 80 1.0 3 -3.5
BZT52B5V1 2W8 5.1 5.00 5.20 5 60 2.0 2 -2.7
BZT52B5V6 2W9 5.6 5.49 5.71 5 40 2.0 1 -2.0
BZT52B6V2 2WA 6.2 6.08 6.32 5 10 4.0 3 0.4
BZT52B6V8 2WB 6.8 6.66 6.94 5 15 4.0 2 1.2
BZT52B7V5 2WC 7.5 7.35 7.65 5 15 5.0 1 2.5
BZT52B8V2 2WD 8.2 8.04 8.36 5 15 5.0 0.7 3.2
BZT52B9V1 2WE 9.1 8.92 9.28 5 15 6.0 0.5 3.8
BZT52B10 2WF 10 9.80 10.20 5 20 7.0 0.2 4.5
BZT52B11 2WG 11 10.78 11.22 5 20 8.0 0.1 5.4
BZT52B12 2WH 12 11.76 12.24 5 25 8.0 0.1 6.0
BZT52B13 2WI 13 12.74 13.26 5 30 8.0 0.1 7.0
BZT52B15 2WJ 15 14.70 15.30 5 30 10.5 0.1 9.2
BZT52B16 2WK 16 15.68 16.32 5 40 11.2 0.1 10.4
BZT52B18 2WL 18 17.64 18.36 5 45 12.6 0.1 12.4
BZT52B20 2WM 20 19.60 20.40 5 55 14.0 0.1 14.4
BZT52B22 2WN 22 21.56 22.44 5 55 15.4 0.1 16.4
BZT52B24 2WO 24 23.52 24.48 5 70 16.8 0.1 18.4
BZT52B27 2WP 27 26.46 27.54 2 80 18.9 0.1 21.4
BZT52B30 2WQ 30 29.40 30.60 2 80 21.0 0.1 24.4
BZT52B33 2WR 33 32.34 33.66 2 80 23.1 0.1 27.4
BZT52B36 2WS 36 35.28 36.72 2 90 25.2 0.1 30.4
BZT52B39 2WT 39 38.22 39.78 2 130 27.3 0.1 33.4
BZT52B43 2WU 43 41.16 42.84 2 130 29.4 0.1 36.4

General Characteristics

Characteristic Symbol Value Unit
Forward Voltage (@ IF = 10mA) VF 0.9 V
Power Dissipation (Note 1) Pd 350 mW
Thermal Resistance from Junction to Ambient RJA 357 /W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 ~ +150

Notes:

  • 1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm.
  • 2. Short duration test pulse used to minimize self-heating effect.
  • 3. f = 1kHz, Ta=25 unless otherwise specified.
  • Our company currently provides 5.1 V - 20 V products only.

2410121255_JSCJ-BZT52B15_C78858.pdf

Related Products
quality Small signal Zener diode YANGJIE MMSZ5229BQ epoxy UL94 V0 flammability rating with tin leads factory
Small signal Zener diode YANGJIE MMSZ5229BQ epoxy UL94 V0 flammability rating with tin leads
Product OverviewThe MMSZ5221BQ THRU MMSZ5261BQ series are small signal Zener diodes designed for general regulation functions. These diodes feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. They offer Zener voltages ranging from 2.4V to ...
quality Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks factory
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
quality Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability factory
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
quality RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW factory
RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW
Product OverviewThe S8050-L through S8050-H series are NPN general-purpose amplifiers manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. These components are designed for general amplification applications and feature an epoxy casing that meets UL-94 V-0 flammability rating. Halogen...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.