High voltage N Channel Power MOSFET JSCJ CJU02N60M1 with avalanche and commutation energy capability
Key Attributes
Model Number:
CJU02N60M1
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
2A
RDS(on):
3.7Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
7pF
Number:
1 N-channel
Output Capacitance(Coss):
38pF
Pd - Power Dissipation:
31W
Input Capacitance(Ciss):
322pF
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
CJU02N60M1
Package:
TO-252-2L
Product Description
Product Overview
The CJU02N60M1 is a high voltage N-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. It features an advanced termination scheme for enhanced voltage-blocking capability and is designed to withstand high energy in avalanche and commutation modes. This energy-efficient design includes a fast-recovery drain-to-source diode. It is ideal for high voltage, high-speed switching applications such as power supplies, converters, and PWM motor controls, particularly in bridge circuits where diode speed and commutating safe operating areas are critical, offering an additional safety margin against voltage transients.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Device Code: CJU02N60M1
- Packaging: TO-252-2L Plastic-Encapsulate
- Marking: U02N60M1
- Molding Compound: Solid dot = Green molding compound device, if none, the normal device
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | VGS=0V, ID=250A | 600 | V | ||
| Gate-Source Voltage | VGS | 30 | V | |||
| Continuous Drain Current | ID | 2 | A | |||
| Pulsed Drain Current | IDM | 8 | A | |||
| Single Pulsed Avalanche Energy | EAS | 88 | mJ | |||
| Power Dissipation | PD | (Ta=25) | 31 | W | ||
| Thermal Resistance Junction to Ambient | RJA | (Ta=25) | 100 | /W | ||
| Thermal Resistance Junction to Case | RJC | 4 | /W | |||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | |||
| Zero gate voltage drain current | IDSS | VDS=600V, VGS =0V | 1.0 | A | ||
| Gate-body leakage current | IGSS | VDS=0V, VGS =30V | 100 | nA | ||
| Gate-threshold voltage | VGS(th) | VDS=VGS, ID =250A | 2.0 | 3.4 | 4.0 | V |
| Static drain-source on-state resistance | RDS(on) | VGS=10V, ID =1A | 2.7 | |||
| Input capacitance | Ciss | VDS =25V,VGS =0V, f =1MHz | 322 | pF | ||
| Output capacitance | Coss | 38 | pF | |||
| Reverse transfer capacitance | Crss | 7 | pF | |||
| Total gate charge | Qg | VGS=10V, VDS=25V, ID=2A | 1.6 | nC | ||
| Gate-source charge | Qgs | 2.1 | nC | |||
| Gate-drain charge | Qgd | 3.2 | nC | |||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=2A | 1.4 | V | ||
| Continuous drain-source diode forward current | IS | 2.0 | A | |||
| Pulsed drain-source diode forward current | ISM | 8.0 | A | |||
| Turn-on delay time | td(on) | VDD=25V, VGS=10V, RG=18, ID =2A, f =1MHz TJ =25 unless otherwise specified | 5.7 | nS | ||
| Turn-on rise time | tr | 3.7 | nS | |||
| Turn-off delay time | td(off) | 7.6 | nS | |||
| Turn-off fall time | tf | 7.4 | nS | |||
| Reverse recovery time | trr | dIF/dt = 100A/s, IS = 2A, VDD = 400V | 192 | ns | ||
| Reverse recovery charge | Qrr | 1027 | nC |
2410121909_JSCJ-CJU02N60M1_C19943719.pdf
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