Low RDS ON dual N channel MOSFET JSCJ 2N7002DW K72 suitable for portable devices and DC DC converters

Key Attributes
Model Number: 2N7002DW K72
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
115mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
5Ω@10V
Gate Threshold Voltage (Vgs(th)):
2.5V
Number:
2 N-Channel
Input Capacitance(Ciss):
50pF
Pd - Power Dissipation:
150mW
Mfr. Part #:
2N7002DW K72
Package:
SC-70-6(SOT-363)
Product Description

Product Overview

The JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD 2N7002DW is a dual N-channel MOSFET in a SOT-363 package. It features a high density cell design for low RDS(ON), voltage-controlled small signal switching, and high saturation current capability, making it suitable for load switching in portable devices and DC/DC converters. It is a rugged and reliable component.

Product Attributes

  • Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
  • Package: SOT-363
  • Material: Plastic-Encapsulate

Technical Specifications

ParameterSymbolTest conditionsMinTypMaxUnit
Drain-source breakdown voltageV(BR)DSSVGS=0 V, ID=250 A60V
Gate-threshold voltageVth(GS)VDS=VGS, ID=250 A11.62.5V
Gate-body leakagelGSSVDS=0 V, VGS=20 V80nA
Zero gate voltage drain currentIDSSVDS=60 V, VGS=0 V80nA
Drain-source on-resistanceRDS(on)VGS=10 V, ID=500mA1.15
VGS=5 V, ID=50mA1.27
Forward transconductancegfsVDS=10 V, ID=200mA80500mS
Drain-source on-voltageVDS(on)VGS=10V, ID=500mA0.53.75V
VGS=5V, ID=50mA0.050.375
Diode forward voltageVSDIS=115mA, VGS=0 V0.551.2V
Input capacitanceCissVDS=25V, VGS=0V, f=1MHz50pF
Output capacitanceCoss25
Reverse transfer capacitanceCrss5
Switching timetd(on)VDD=25 V, RL=50 ID=500mA,VGEN=10V,G=25 20ns
td(off)40

2410121255_JSCJ-2N7002DW-K72_C61840.pdf

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