Low RDS ON dual N channel MOSFET JSCJ 2N7002DW K72 suitable for portable devices and DC DC converters
Product Overview
The JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD 2N7002DW is a dual N-channel MOSFET in a SOT-363 package. It features a high density cell design for low RDS(ON), voltage-controlled small signal switching, and high saturation current capability, making it suitable for load switching in portable devices and DC/DC converters. It is a rugged and reliable component.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Package: SOT-363
- Material: Plastic-Encapsulate
Technical Specifications
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Drain-source breakdown voltage | V(BR)DSS | VGS=0 V, ID=250 A | 60 | V | ||
| Gate-threshold voltage | Vth(GS) | VDS=VGS, ID=250 A | 1 | 1.6 | 2.5 | V |
| Gate-body leakage | lGSS | VDS=0 V, VGS=20 V | 80 | nA | ||
| Zero gate voltage drain current | IDSS | VDS=60 V, VGS=0 V | 80 | nA | ||
| Drain-source on-resistance | RDS(on) | VGS=10 V, ID=500mA | 1.1 | 5 | ||
| VGS=5 V, ID=50mA | 1.2 | 7 | ||||
| Forward transconductance | gfs | VDS=10 V, ID=200mA | 80 | 500 | mS | |
| Drain-source on-voltage | VDS(on) | VGS=10V, ID=500mA | 0.5 | 3.75 | V | |
| VGS=5V, ID=50mA | 0.05 | 0.375 | ||||
| Diode forward voltage | VSD | IS=115mA, VGS=0 V | 0.55 | 1.2 | V | |
| Input capacitance | Ciss | VDS=25V, VGS=0V, f=1MHz | 50 | pF | ||
| Output capacitance | Coss | 25 | ||||
| Reverse transfer capacitance | Crss | 5 | ||||
| Switching time | td(on) | VDD=25 V, RL=50 ID=500mA,VGEN=10V,G=25 | 20 | ns | ||
| td(off) | 40 |
2410121255_JSCJ-2N7002DW-K72_C61840.pdf
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