JSCJ 2N7000 TA N Channel MOSFET Featuring High Drain Current and Low Gate Threshold Voltage in TO 92
Product Overview
The JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD 2N7000 is an N-Channel MOSFET in a TO-92 plastic-encapsulated package. It features a high-density cell design for low RDS(ON), acting as a voltage-controlled small signal switch. This MOSFET is rugged, reliable, and offers high saturation current capability, making it suitable for various applications.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Package Type: TO-92 Plastic-Encapsulate
- Origin: China (implied by manufacturer name)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0 V, ID=10 A | 60 | V | ||
| Gate-Threshold Voltage | V(GS)th | VDS=VGS, ID=1mA | 0.8 | 7 | V | |
| Gate-body Leakage | lGSS | VDS=0 V, VGS=15 V | 10 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60 V, VGS=0 V | 1 | A | ||
| On-state Drain Current | ID(ON) | VGS=4.5 V, VDS=10 V | 75 | mA | ||
| Drain-Source On-Resistance | RDS(on) | VGS=4.5V, ID=75mA | 6 | |||
| VGS=10V, ID=500mA | 5 | |||||
| Forward Transconductance | gfs | VDS=10 V, ID=200mA | 100 | mS | ||
| VGS=10V, ID=500mA | 2.5 | |||||
| Drain-source on-voltage | VDS(on) | VGS=4.5V, ID=75mA | 0.45 | V | ||
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1MHz | 60 | pF | ||
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1MHz | 25 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1MHz | 5 | pF | ||
| Turn-on Time | td(on) | VDD=15 V, RL=30 ID=500mA,VGEN=10 V RG=25 | 10 | ns | ||
| Turn-off Time | td(off) | VDD=15 V, RL=30 ID=500mA,VGEN=10 V RG=25 | 10 | ns |
Ordering Information
| Part Number | Package | Packing Method | Pack Quantity |
| 2N7000 | TO-92 | Bag | 1000pcs/Bag |
| 2N7000 | TO-92 | Box | 2000pcs/Box |
2409302331_JSCJ-2N7000-TA_C2910414.pdf
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