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quality Lead Free Medium Current Zener Diode JSCJ BZT52B11S with Wide Zener Voltage Range and SOD 323 Package factory
quality Lead Free Medium Current Zener Diode JSCJ BZT52B11S with Wide Zener Voltage Range and SOD 323 Package factory

Lead Free Medium Current Zener Diode JSCJ BZT52B11S with Wide Zener Voltage Range and SOD 323 Package

Key Attributes
Model Number: BZT52B11S
Product Custom Attributes
Operating Junction Temperature Range:
-55℃~+150℃
Impedance(Zzt):
20Ω
Pd - Power Dissipation:
200mW
Zener Voltage(Range):
10.28V~11.22V
Zener Voltage(Nom):
11V
Impedance(Zzk):
150Ω
Mfr. Part #:
BZT52B11S
Package:
SOD-323
Product Description

Product Overview

The BZT52B2V4S-BZT52B39S series are general-purpose, medium-current Zener diodes featuring a planar die construction. They are ideally suited for automated assembly processes and are available in lead-free versions. These diodes offer a wide range of Zener voltages from 2.4V to 39V.

Product Attributes

  • Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
  • Package Type: SOD-323
  • Material: Plastic-Encapsulate Diodes
  • Certifications: Available in Lead Free Version

Technical Specifications

Type NumberType CodeZener Voltage Range (Note 2) Nom(V)Min(V)Max(V)Test Current IZTMax Zener Impedance ZZT@IZT ()Max Reverse Current IR @ VR (mA)Typical Temperature Coefficent @IZTC (mV/C)Power Dissipation (Note 1) Pd (mW)Thermal Resistance from Junction to Ambient RJA (/W)Operation Junction and Storage Temperature Range TJ,Tstg (C)
BZT52B2V4S2WX2.42.352.455 mA1001.0 @ 0V-3.5200625-55 ~ +150
BZT52B2V7S2W12.72.652.755 mA1001.0 @ 0V-3.5200625-55 ~ +150
BZT52B3V0S2W23.02.943.065 mA951.0 @ 0V-3.5200625-55 ~ +150
BZT52B3V3S2W33.33.233.375 mA951.0 @ 0V-3.5200625-55 ~ +150
BZT52B3V6S2W43.63.533.675 mA901.0 @ 0V-3.5200625-55 ~ +150
BZT52B3V9S2W53.93.823.985 mA901.0 @ 0V-3.5200625-55 ~ +150
BZT52B4V3S2W64.34.214.395 mA901.0 @ 0V-3.5200625-55 ~ +150
BZT52B4V7S2W74.74.614.795 mA802.0 @ 0.2V-3.5200625-55 ~ +150
BZT52B5V1S2W85.15.005.205 mA602.0 @ 1.2V-2.7200625-55 ~ +150
BZT52B5V6S2W95.65.495.715 mA402.0 @ 2.5V-2.0200625-55 ~ +150
BZT52B6V2S2WA6.26.086.325 mA104.0 @ 0.4V0.4200625-55 ~ +150
BZT52B6V8S2WB6.86.666.945 mA154.0 @ 1.2V1.2200625-55 ~ +150
BZT52B7V5S2WC7.57.357.655 mA155.0 @ 2.5V2.5200625-55 ~ +150
BZT52B8V2S2WD8.28.048.365 mA155.0 @ 3.2V3.2200625-55 ~ +150
BZT52B9V1S2WE9.18.929.285 mA156.0 @ 3.8V3.8200625-55 ~ +150
BZT52B10S2WF109.8010.205 mA207.0 @ 4.5V4.5200625-55 ~ +150
BZT52B11S2WG1110.7811.225 mA208.0 @ 5.4V5.4200625-55 ~ +150
BZT52B12S2WH1211.7612.245 mA258.0 @ 6.0V6.0200625-55 ~ +150
BZT52B13S2WI1312.7413.265 mA308.0 @ 7.0V7.0200625-55 ~ +150
BZT52B15S2WJ1514.7015.305 mA3010.5 @ 9.2V9.2200625-55 ~ +150
BZT52B16S2WK1615.6816.325 mA4011.2 @ 10.4V10.4200625-55 ~ +150
BZT52B18S2WL1817.6418.365 mA4512.6 @ 12.4V12.4200625-55 ~ +150
BZT52B20S2WM2019.6020.405 mA5514.0 @ 14.4V14.4200625-55 ~ +150
BZT52B22S2WN2221.5622.445 mA5515.4 @ 16.4V16.4200625-55 ~ +150
BZT52B24S2WO2423.5224.485 mA7016.8 @ 18.4V18.4200625-55 ~ +150
BZT52B27S2WP2726.4627.542 mA8018.9 @ 21.4V21.4200625-55 ~ +150
BZT52B30S2WQ3029.4030.602 mA8021.0 @ 24.4V24.4200625-55 ~ +150
BZT52B33S2WR3332.3433.662 mA8023.1 @ 27.4V27.4200625-55 ~ +150
BZT52B36S2WS3635.2836.722 mA9025.2 @ 30.4V30.4200625-55 ~ +150
BZT52B39S2WT3938.2239.782 mA13027.3 @ 33.4V33.4200625-55 ~ +150

Notes:
1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2.
2. Short duration test pulse used to minimize self-heating effect.
3. f = 1kHz.


2410121531_JSCJ-BZT52B11S_C5293089.pdf

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