P Channel Power MOSFET JSCJ CJQ4459A Low Resistance Package Ideal for Load Switch Battery Protection
Key Attributes
Model Number:
CJQ4459A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
6A
RDS(on):
40mΩ@4.5V,5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
66pF@15V
Number:
1 P-Channel
Output Capacitance(Coss):
107pF
Input Capacitance(Ciss):
760pF@15V
Pd - Power Dissipation:
2.3W
Gate Charge(Qg):
13.4nC@10V
Mfr. Part #:
CJQ4459A
Package:
SOP-8
Product Description
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD CJQ4459A P-Channel Power MOSFET
The CJQ4459A is a P-Channel Power MOSFET designed with advanced trench technology, offering extremely low RDS(ON) due to its low resistance package. It is ideal for load switch and battery protection applications.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Device Code: CJQ4459A
- Marking: Q4459A XX
- Packaging: SOP8 Plastic-Encapsulate
- Molding Compound: Solid dot = Green molding compound device, if none, the normal device
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR) DSS | VGS = 0V, ID =-250A | -30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-24V, VGS =0V | -1.0 | A | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| On Characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =-250A | -1.0 | -1.6 | -2.5 | V |
| Static drain-source on-state resistance | RDS(on) | VGS =-10V, ID =-6A | 28 | m | ||
| Static drain-source on-state resistance | RDS(on) | VGS =-4.5V, ID =-5A | 40 | m | ||
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =-15V,VGS =0V, f =1MHz | 560 | pF | ||
| Output capacitance | Coss | 107 | ||||
| Reverse transfer capacitance | Crss | 66 | ||||
| Total gate charge | Qg | VGS=-10V, VDD=-15V, ID=-6A | 7.0 | nC | ||
| Gate-source charge | Qgs | VGS=-10V, VDD=-15V, ID=-6A | 2.7 | |||
| Gate-drain charge | Qgd | VGS=-10V, VDD=-15V, ID=-6A | 2.5 | |||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=-2A | -1.2 | V | ||
| Continuous drain-source diode forward current | IS | -6 | A | |||
| Pulsed drain-source diode forward current | ISM | -24 | A | |||
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | TJ=25 | -6 | A | ||
| Pulsed Drain Current | IDM | -24 | A | |||
| Single Pulsed Avalanche Energy | EAS | 34 | mJ | |||
| Power Dissipation | PD | TJ=25 | 2.3 | W | ||
| Thermal Resistance Junction to Ambient | RJA | 54 | /W | |||
| Operating Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | |||
Applications
- Battery Switch
- Load Switch
2410121918_JSCJ-CJQ4459A_C5441191.pdf
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