Compact DFN1006 3L Package P Channel MOSFET JSCJ CJBA3139K for Logic Level Shifting and Load Control
Key Attributes
Model Number:
CJBA3139K
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
660mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
520mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
350mV
Reverse Transfer Capacitance (Crss@Vds):
9pF
Number:
1 P-Channel
Input Capacitance(Ciss):
113pF
Pd - Power Dissipation:
100mW
Gate Charge(Qg):
-
Mfr. Part #:
CJBA3139K
Package:
DFN-3L(1x0.6)
Product Description
Product Overview
The CJBA3139K is a P-Channel MOSFET in a DFN1006-3L package, designed for surface mounting. It features low RDS(on), operates at low logic level gate drive, and includes ESD protection for the gate. This product is lead-free and suitable for various load and power switching applications, interfacing, battery management for ultra-small portable electronics, and logic level shifting.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Product Type: P-Channel MOSFET
- Package: DFN1006-3L
- Material: Plastic-Encapsulate
- Certifications: Lead Free Product is Acquired
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID =-250A | -20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =-20V,VGS = 0V | -1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS =10V, VDS = 0V | 20 | uA | ||
| Gate Threshold Voltage | VGS(th) | VDS =VGS, ID =-250A | -0.35 | -1.1 | V | |
| Drain-Source On-Resistance | RDS(on) | VGS =-4.5V, ID =-1A | 520 | m | ||
| Drain-Source On-Resistance | RDS(on) | VGS =-2.5V, ID =-0.8A | 780 | m | ||
| Drain-Source On-Resistance | RDS(on) | VGS =-1.8V, ID =-0.5A | 950 | m | ||
| Forward Transconductance | gFS | VDS =-10V, ID =-0.54A | 1.2 | S | ||
| Diode Forward Voltage | VSD | IS = -0.5A, VGS = 0V | -1.2 | V | ||
| Input Capacitance | Ciss | VDS =-16V,VGS =0V,f =1MHz | 113 | pF | ||
| Output Capacitance | Coss | VDS =-16V,VGS =0V,f =1MHz | 15 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =-16V,VGS =0V,f =1MHz | 9 | pF | ||
| Turn-on Delay Time | td(on) | VDD=-4.5V,VGS=-10V, ID=-200mA,RGEN=10 | 9 | ns | ||
| Turn-on Rise Time | tr | VDD=-4.5V,VGS=-10V, ID=-200mA,RGEN=10 | 5.7 | ns | ||
| Turn-off Delay Time | td(off) | VDD=-4.5V,VGS=-10V, ID=-200mA,RGEN=10 | 32.6 | ns | ||
| Turn-off Fall Time | tf | VDD=-4.5V,VGS=-10V, ID=-200mA,RGEN=10 | 20.3 | ns |
2410121848_JSCJ-CJBA3139K_C504099.pdf
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