Plastic Encapsulated Zener Diode JSCJ BZT52C6V8S SOD323 Package Ideal for Medium Current Applications
Key Attributes
Model Number:
BZT52C6V8S
Product Custom Attributes
Impedance(Zzt):
15Ω
Diode Configuration:
Independent
Zener Voltage(Range):
6.4V~7.2V
Pd - Power Dissipation:
200mW
Zener Voltage(Nom):
6.8V
Impedance(Zzk):
80Ω
Mfr. Part #:
BZT52C6V8S
Package:
SOD-323
Product Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BZT52C2V4S-BZT52C39S ZENER DIODE
The BZT52C2V4S-BZT52C39S series are Zener diodes in a SOD-323 package, featuring planar die construction and 200mW power dissipation on a ceramic PCB. They are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. A lead-free version is also available.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Package: SOD-323
- Material: Plastic-Encapsulate Diodes
- Version: Lead free available
Technical Specifications
| Type | Marking | Zener Voltage Nom(V) | Zener Voltage Min(V) | Zener Voltage Max(V) | Test Current IZT (mA) | Max Zener Impedance ZZT@IZT () | Max Reverse Current IR @ VR (A) | Typical Temperature Coefficient @IZTC (mV/) |
|---|---|---|---|---|---|---|---|---|
| BZT52C2V4S | WX | 2.4 | 2.20 | 2.60 | 5 | 600 | 50 | -3.5 |
| BZT52C2V7S | W1 | 2.7 | 2.5 | 2.9 | 5 | 600 | 20 | -3.5 |
| BZT52C3V0S | W2 | 3.0 | 2.8 | 3.2 | 5 | 600 | 10 | -3.5 |
| BZT52C3V3S | W3 | 3.3 | 3.1 | 3.5 | 5 | 600 | 5 | -3.5 |
| BZT52C3V6S | W4 | 3.6 | 3.4 | 3.8 | 5 | 600 | 5 | -3.5 |
| BZT52C3V9S | W5 | 3.9 | 3.7 | 4.1 | 5 | 600 | 3 | -3.5 |
| BZT52C4V3S | W6 | 4.3 | 4.0 | 4.6 | 5 | 600 | 3 | -3.5 |
| BZT52C4V7S | W7 | 4.7 | 4.4 | 5.0 | 5 | 500 | 3 | -3.5 |
| BZT52C5V1S | W8 | 5.1 | 4.8 | 5.4 | 5 | 480 | 2 | -2.7 |
| BZT52C5V6S | W9 | 5.6 | 5.2 | 6.0 | 5 | 400 | 1 | -2 |
| BZT52C6V2S | WA | 6.2 | 5.8 | 6.6 | 5 | 150 | 3 | 0.4 |
| BZT52C6V8S | WB | 6.8 | 6.4 | 7.2 | 5 | 80 | 2 | 1.2 |
| BZT52C7V5S | WC | 7.5 | 7.0 | 7.9 | 5 | 80 | 1 | 2.5 |
| BZT52C8V2S | WD | 8.2 | 7.7 | 8.7 | 5 | 80 | 0.7 | 3.2 |
| BZT52C9V1S | WE | 9.1 | 8.5 | 9.6 | 5 | 100 | 0.5 | 3.8 |
| BZT52C10S | WF | 10 | 9.4 | 10.6 | 5 | 150 | 0.2 | 4.5 |
| BZT52C11S | WG | 11 | 10.4 | 11.6 | 5 | 150 | 0.1 | 5.4 |
| BZT52C12S | WH | 12 | 11.4 | 12.7 | 5 | 150 | 0.1 | 6.0 |
| BZT52C13S | WI | 13 | 12.4 | 14.1 | 5 | 170 | 0.1 | 7.0 |
| BZT52C15S | WJ | 15 | 13.8 | 15.6 | 5 | 200 | 0.1 | 9.2 |
| BZT52C16S | WK | 16 | 15.3 | 17.1 | 5 | 200 | 0.1 | 10.4 |
| BZT52C18S | WL | 18 | 16.8 | 19.1 | 5 | 225 | 0.1 | 12.4 |
| BZT52C20S | WM | 20 | 18.8 | 21.2 | 5 | 225 | 0.1 | 14.4 |
| BZT52C22S | WN | 22 | 20.8 | 23.3 | 5 | 250 | 0.1 | 16.4 |
| BZT52C24S | WO | 24 | 22.8 | 25.6 | 5 | 250 | 0.1 | 18.4 |
| BZT52C27S | WP | 27 | 25.1 | 28.9 | 2 | 300 | 0.1 | 21.4 |
| BZT52C30S | WQ | 30 | 28.0 | 32.0 | 2 | 300 | 0.1 | 24.4 |
| BZT52C33S | WR | 33 | 31.0 | 35.0 | 2 | 325 | 0.1 | 27.4 |
| BZT52C36S | WS | 36 | 34.0 | 38.0 | 2 | 350 | 0.1 | 30.4 |
| BZT52C39S | WT | 39 | 37.0 | 41.0 | 2 | 350 | 0.1 | 33.4 |
| Characteristic | Symbol | Value | Unit | Notes |
|---|---|---|---|---|
| Forward Voltage | VF | 0.9 | V | @ IF = 10mA |
| Power Dissipation | PD | 200 | mW | on ceramic PBC |
| Thermal Resistance from Junction to Ambient | RJA | 625 | /W | |
| Junction Temperature | Tj | 150 | ||
| Storage Temperature Range | Tstg | -55~+150 |
Notes:
1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2.
2. Short duration test pulse used to minimize self-heating effect.
3. f = 1kHz.
2410121440_JSCJ-BZT52C6V8S_C22613.pdf
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