Low Gate Charge N Channel MOSFET JSCJ CJQ4406 Ideal for Switched Mode Power Supply Applications
Key Attributes
Model Number:
CJQ4406
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
12mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
180pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
1.55nF@15V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
13nC@5V
Mfr. Part #:
CJQ4406
Package:
SOP-8
Product Description
Product Overview
The CJQ4406 is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for high-side switching in Switched-Mode Power Supplies (SMPS) and general-purpose applications. Its key advantages include efficient power handling and reliable performance.
Product Attributes
- Device Code: CJQ4406
- Pin 1 Indicator: Solid dot
- Molding Compound: Green (if present)
- Manufacturer: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25 | 10 | A | ||
| Pulsed Drain Current | IDM | 40 | A | |||
| Single Pulsed Avalanche Energy | EAS(1) | VDD=50V,L=0.5mH, RG=25Ω, Starting TJ = 25°C | 105 | mJ | ||
| Power Dissipation | PD | TA=25 | 1.4 | W | ||
| Thermal Resistance from Junction to Ambient | RθJA | 89 | °C/W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | Tstg | -55 | +150 | °C | ||
| Lead Temperature for Soldering Purposes | TL | (1/8'' from case for 10s) | 260 | °C | ||
| Off characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250µA | 30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =30V, VGS =0V | 1 | µA | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS = ±20V | ±100 | nA | ||
| On characteristics (note 1) | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250µA | 1.0 | 1.5 | 3.0 | V |
| Static drain-source on-state resistance | RDS(on) | VGS =10V, ID =12A | 7.6 | 12 | mΩ | |
| VGS =4.5V, ID =10A | 11 | 16 | mΩ | |||
| Forward transconductance | gFS | VDS =5V, ID =10A | 15 | S | ||
| Dynamic characteristics (note 2) | ||||||
| Input capacitance | Ciss | VDS =15V,VGS =0V, f =1MHz | 1550 | pF | ||
| Output capacitance | Coss | 300 | ||||
| Reverse transfer capacitance | Crss | 180 | ||||
| Switching characteristics (note 2) | ||||||
| Total gate charge | Qg | VDS=15V, VGS=5V, ID=10A | 13 | nC | ||
| Gate-source charge | Qgs | 5.5 | ||||
| Gate-drain charge | Qgd | 3.5 | ||||
| Turn-on delay time | td(on) | VDD=25V,ID=1A, VGS=10V,RG=6Ω, RL=6.7Ω | 30 | ns | ||
| Turn-on rise time | tr | 20 | ||||
| Turn-off delay time | td(off) | 100 | ||||
| Turn-off fall time | tf | 80 | ||||
| Gate Resistance | Rg | f =1MHz, VDS=0V, VGS=0V | 0.8 | 2.4 | Ω | |
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=10A (note 1) | 1.2 | V | ||
| Continuous drain-source diode forward current | IS | 10 | A | |||
| Pulsed drain-source diode forward current | ISM | 40 | A | |||
2410121326_JSCJ-CJQ4406_C504133.pdf
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