Power Switching Device JSCJ CJAC80SN10 N Channel Power MOSFET with Low Gate Charge and Fast Switching
Key Attributes
Model Number:
CJAC80SN10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
80A
RDS(on):
10.5mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
8pF
Number:
1 N-channel
Output Capacitance(Coss):
650pF
Input Capacitance(Ciss):
3.15nF
Pd - Power Dissipation:
100W
Gate Charge(Qg):
100nC@10V
Mfr. Part #:
CJAC80SN10
Package:
PDFNWB5x6-8L
Product Description
CJAC80SN10 N-Channel Power MOSFET
The CJAC80SN10 is an N-Channel Power MOSFET utilizing shielded gate trench technology. It is designed to offer excellent RDS(ON) with low gate charge, making it suitable for a wide range of power switching applications. Key features include excellent heat dissipation, ultra low gate charge, low reverse transfer capacitance, fast switching capability, and specified avalanche energy.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Part Number: CJAC80SN10
- Package: PDFNWB56-8L
- Technology: Shielded Gate Trench
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID =250A | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =80V, VGS =0V | 1.0 | 100 | A | |
| Gate-Body Leakage Current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| Gate-Threshold Voltage | VGS(th) | VDS =VGS, ID =250A | 1.3 | 1.9 | 2.5 | V |
| Static Drain-Source On-State Resistance | RDS(on) | VGS =10V, ID =20A | 6.2 | m | ||
| VGS =4.5V, ID =15A | 8.8 | m | ||||
| Input Capacitance | Ciss | VDS =50V,VGS =0V, f =500KHz | 2100 | pF | ||
| Output Capacitance | Coss | 420 | pF | |||
| Reverse Transfer Capacitance | Crss | 4.5 | pF | |||
| Total Gate Charge | Qg | VGS=10V, VDS=50V, ID=20A | 50 | nC | ||
| Gate-Source Charge | Qgs | 5.2 | nC | |||
| Gate-Drain Charge | Qg d | 9.2 | nC | |||
| Turn-on Delay Time | td(on) | VDD=50V,ID=20A, VGS=10V, RG=3 | 3150 | ns | ||
| Turn-on Rise Time | tr | 650 | ns | |||
| Turn-off Delay Time | td(off) | 8.0 | ns | |||
| Turn-off Fall Time | tf | 100 | ns | |||
| Drain-Source Diode Forward Voltage | VSD | VGS =0V, IS=10A | 1.2 | V | ||
| Continuous Drain-Source Diode Forward Current | IS | 80 | A | |||
| Pulsed Drain-Source Diode Forward Current | ISM | 320 | A | |||
| Continuous Drain Current | ID | Ta=25 (Limited only by maximum temperature allowed) | 80 | A | ||
| Pulsed Drain Current | IDM | 320 | A | |||
| Single Pulsed Avalanche Energy | EAS | VGS=10V, L=0.5mH | 280 | mJ | ||
| Power Dissipation | PD | TC=25 | 100 | W | ||
| Thermal Resistance Junction to Ambient | RJA | Device mounted on 1 in 2 FR-4 board with 2oz. Copper, still air | 62.5 | /W | ||
| Thermal Resistance Junction to Case | RJC | 1.25 | /W | |||
| Operating Junction and Storage Temperature Range | TJ ,Tstg | -55 | +150 |
2410121714_JSCJ-CJAC80SN10_C2913221.pdf
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