Surface mount planar die Zener diode JSCJ MMSZ5255BS ideal for medium current applications in SOD323 package
Key Attributes
Model Number:
MMSZ5255BS
Product Custom Attributes
Impedance(Zzt):
44Ω
Diode Configuration:
Independent
Pd - Power Dissipation:
200mW
Zener Voltage(Range):
26.6V~29.4V
Zener Voltage(Nom):
28V
Impedance(Zzk):
600Ω
Mfr. Part #:
MMSZ5255BS
Package:
SOD-323
Product Description
Product Overview
The MMSZ5221BS-MMSZ5259BS series are planar die construction Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes due to their ultra-small surface mount package (SOD-323).
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China (implied by company name and website)
- Package: SOD-323
Technical Specifications
| Type Number | Nominal Zener Voltage (V) | Min Zener Voltage (V) | Max Zener Voltage (V) | Test Current (mA) | Max Zener Impedance () @ IZT | Max Reverse Current (uA) @ VR | Forward Voltage (V) @ IF=10mA |
| MMSZ5221BS | 2.4 | 2.28 | 2.52 | 20 | 30 | 0.25 | 0.9 |
| MMSZ5223BS | 2.7 | 2.57 | 2.84 | 20 | 30 | 0.25 | 0.9 |
| MMSZ5225BS | 3.0 | 2.85 | 3.15 | 20 | 30 | 0.25 | 0.9 |
| MMSZ5226BS | 3.3 | 3.14 | 3.47 | 20 | 28 | 0.25 | 0.9 |
| MMSZ5227BS | 3.6 | 3.42 | 3.78 | 20 | 24 | 0.25 | 0.9 |
| MMSZ5228BS | 3.9 | 3.71 | 4.10 | 20 | 23 | 0.25 | 0.9 |
| MMSZ5229BS | 4.3 | 4.09 | 4.52 | 20 | 22 | 0.25 | 0.9 |
| MMSZ5230BS | 4.7 | 4.47 | 4.94 | 20 | 19 | 0.25 | 0.9 |
| MMSZ5231BS | 5.1 | 4.85 | 5.36 | 20 | 17 | 0.25 | 0.9 |
| MMSZ5232BS | 5.6 | 5.32 | 5.88 | 20 | 11 | 0.25 | 0.9 |
| MMSZ5233BS | 6.0 | 5.70 | 6.30 | 20 | 7 | 0.25 | 0.9 |
| MMSZ5234BS | 6.2 | 5.89 | 6.51 | 20 | 7 | 0.25 | 0.9 |
| MMSZ5235BS | 6.8 | 6.46 | 7.14 | 20 | 5 | 0.25 | 0.9 |
| MMSZ5236BS | 7.5 | 7.13 | 7.88 | 20 | 6 | 0.25 | 0.9 |
| MMSZ5237BS | 8.2 | 7.79 | 8.61 | 20 | 8 | 0.25 | 0.9 |
| MMSZ5238BS | 8.7 | 8.27 | 9.14 | 20 | 8 | 0.25 | 0.9 |
| MMSZ5239BS | 9.1 | 8.65 | 9.56 | 20 | 10 | 0.25 | 0.9 |
| MMSZ5240BS | 10 | 9.50 | 10.50 | 20 | 17 | 0.25 | 0.9 |
| MMSZ5241BS | 11 | 10.45 | 11.55 | 20 | 22 | 0.25 | 0.9 |
| MMSZ5242BS | 12 | 11.40 | 12.60 | 20 | 30 | 0.25 | 0.9 |
| MMSZ5243BS | 13 | 12.35 | 13.65 | 9.5 | 13 | 0.25 | 0.9 |
| MMSZ5244BS | 14 | 13.30 | 14.70 | 9.0 | 15 | 0.25 | 0.9 |
| MMSZ5245BS | 15 | 14.25 | 15.75 | 8.5 | 16 | 0.25 | 0.9 |
| MMSZ5246BS | 16 | 15.20 | 16.80 | 7.8 | 17 | 0.25 | 0.9 |
| MMSZ5248BS | 18 | 17.10 | 18.90 | 7.0 | 21 | 0.25 | 0.9 |
| MMSZ5250BS | 20 | 19.00 | 21.00 | 6.2 | 25 | 0.25 | 0.9 |
| MMSZ5251BS | 22 | 20.90 | 23.10 | 5.6 | 29 | 0.25 | 0.9 |
| MMSZ5252BS | 24 | 22.80 | 25.20 | 5.2 | 33 | 0.25 | 0.9 |
| MMSZ5253BS | 25 | 23.75 | 26.25 | 5.0 | 35 | 0.25 | 0.9 |
| MMSZ5254BS | 27 | 25.65 | 28.35 | 5.0 | 41 | 0.25 | 0.9 |
| MMSZ5255BS | 28 | 26.60 | 29.40 | 4.5 | 44 | 0.25 | 0.9 |
| MMSZ5256BS | 30 | 28.50 | 31.50 | 4.2 | 49 | 0.25 | 0.9 |
| MMSZ5257BS | 33 | 31.35 | 34.65 | 3.8 | 58 | 0.25 | 0.9 |
| MMSZ5258BS | 36 | 34.20 | 37.80 | 3.4 | 70 | 0.25 | 0.9 |
| MMSZ5259BS | 39 | 37.05 | 40.95 | 3.2 | 80 | 0.25 | 0.9 |
Additional Specifications
| Characteristic | Symbol | Value | Unit |
| Power Dissipation (Note 1) | PD | 200 | mW |
| Thermal Resistance, Junction to Ambient Air (Note 1) | RJA | 625 | /W |
| Operation Junction and Storage Temperature Range | TJ, Tstg | -55~+150 |
2410121706_JSCJ-MMSZ5255BS_C2910092.pdf
Related Products
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
