Power MOSFET Device For Load Switch Battery Protection Featuring Low RDS ON Resistance JSCJ CJQ4407S
Key Attributes
Model Number:
CJQ4407S
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
11A
Operating Temperature -:
-55℃~+150℃
RDS(on):
15mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.4V
Reverse Transfer Capacitance (Crss@Vds):
305pF@15V
Number:
1 P-Channel
Pd - Power Dissipation:
1.4W
Input Capacitance(Ciss):
2.885nF@15V
Gate Charge(Qg):
48nC@10V
Mfr. Part #:
CJQ4407S
Package:
SOP-8
Product Description
Product Overview
The CJQ4407S is a P-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. It utilizes advanced trench MOSFET technology and a low resistance package to achieve extremely low RDS(ON). This device is well-suited for load switch and battery protection applications.
Product Attributes
- Device Code: Q4407S
- Pin1 Indicator: Solid dot
- Molding Compound: Green (if solid dot is present)
- Date Code: YY
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China (implied by manufacturer name)
- Material: MOSFET (semiconductor)
- Color: Green molding compound (optional)
- Website: www.jscj-elec.com
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250A | -30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-24V, VGS =0V | -1 | A | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| On Characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =-250A | -1.0 | -1.4 | -2.2 | V |
| Static drain-source on-state resistance | RDS(on) | VGS =-10V, ID =-10A | 10 | 15 | m | |
| VGS =-6V, ID =-8A | 13 | 20 | m | |||
| Forward transconductance | gFS | VDS =-5V, ID =-10A | 20 | S | ||
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =-15V,VGS =0V, f =1MHz | 2885 | pF | ||
| Output capacitance | Coss | 341 | pF | |||
| Reverse transfer capacitance | Crss | 305 | pF | |||
| Switching Characteristics | ||||||
| Total gate charge | Qg | VDS=-15V, VGS=-10V, ID=-10A | 48 | nC | ||
| Gate-source charge | Qgs | 12 | nC | |||
| Gate-drain charge | Qg d | nC | ||||
| Turn-on delay time | td(on) | VDD=-15V, VGS=-10V,RG=3, RL=1.25 | 16 | ns | ||
| Turn-on rise time | tr | 12 | ns | |||
| Turn-off delay time | td(off) | 45 | ns | |||
| Turn-off fall time | tf | 21 | ns | |||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=-2A | -1.2 | V | ||
| Continuous drain-source diode forward current | IS | -11 | A | |||
| Pulsed drain-source diode forward current | ISM | -40 | A | |||
| Parameter | Symbol | Limit | Unit |
| Maximum Ratings | |||
| Drain-Source Voltage | VDS | -30 | V |
| Gate-Source Voltage | VGS | 20 | V |
| Continuous Drain Current | ID | -11 | A |
| Pulsed Drain Current | IDM | -42 | A |
| Single Pulsed Avalanche Energy | EAS (1) | 107 | mJ |
| Power Dissipation | PD | 1.4 | W |
| Thermal Resistance from Junction to Ambient | RJA | 89 | /W |
| Junction Temperature | TJ | 150 | |
| Storage Temperature Range | Tstg | -55 ~+150 | |
| Lead Temperature for Soldering Purposes | TL | 260 | |
2410121917_JSCJ-CJQ4407S_C504135.pdf
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