Medium Current Zener Diode JSCJ BZT52B27S Plastic Encapsulated SOD323 Package Suitable for Assembly
Key Attributes
Model Number:
BZT52B27S
Product Custom Attributes
Operating Junction Temperature Range:
-55℃~+150℃
Impedance(Zzt):
80Ω
Pd - Power Dissipation:
200mW
Zener Voltage(Range):
26.46V~27.54V
Zener Voltage(Nom):
27V
Impedance(Zzk):
300Ω
Mfr. Part #:
BZT52B27S
Package:
SOD-323
Product Description
BZT52B2V4S-BZT52B39S Zener Diode
The BZT52B2V4S-BZT52B39S series is a range of general-purpose, medium current Zener diodes with a planar die construction. They are ideally suited for automated assembly processes and are available in lead-free versions. These diodes are designed for reliable performance in various electronic applications.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Origin: China (implied by manufacturer location)
- Package Type: SOD-323
- Material: Plastic-Encapsulated Diodes
- Lead Free: Available
Technical Specifications
| Type Number | Type Code | Nominal Zener Voltage (V) | Min Zener Voltage (V) | Max Zener Voltage (V) | Test Current (mA) | Max Zener Impedance () | Max Reverse Current (A) | Typical Temperature Coefficient (mV/C) |
|---|---|---|---|---|---|---|---|---|
| BZT52B2V4S | 2WX | 2.4 | 2.35 | 2.45 | 5 | 600 | 50 | -3.5 |
| BZT52B2V7S | 2W1 | 2.7 | 2.65 | 2.75 | 5 | 600 | 20 | -3.5 |
| BZT52B3V0S | 2W2 | 3.0 | 2.94 | 3.06 | 5 | 600 | 10 | -3.5 |
| BZT52B3V3S | 2W3 | 3.3 | 3.23 | 3.37 | 5 | 600 | 5 | -3.5 |
| BZT52B3V6S | 2W4 | 3.6 | 3.53 | 3.67 | 5 | 600 | 5 | -3.5 |
| BZT52B3V9S | 2W5 | 3.9 | 3.82 | 3.98 | 5 | 600 | 3 | -3.5 |
| BZT52B4V3S | 2W6 | 4.3 | 4.21 | 4.39 | 5 | 600 | 3 | -3.5 |
| BZT52B4V7S | 2W7 | 4.7 | 4.61 | 4.79 | 5 | 500 | 3 | -3.5 |
| BZT52B5V1S | 2W8 | 5.1 | 5.00 | 5.20 | 5 | 480 | 2 | -2.7 |
| BZT52B5V6S | 2W9 | 5.6 | 5.49 | 5.71 | 5 | 400 | 1 | -2.0 |
| BZT52B6V2S | 2WA | 6.2 | 6.08 | 6.32 | 5 | 150 | 3 | 0.4 |
| BZT52B6V8S | 2WB | 6.8 | 6.66 | 6.94 | 5 | 80 | 2 | 1.2 |
| BZT52B7V5S | 2WC | 7.5 | 7.35 | 7.65 | 5 | 80 | 1 | 2.5 |
| BZT52B8V2S | 2WD | 8.2 | 8.04 | 8.36 | 5 | 80 | 0.7 | 3.2 |
| BZT52B9V1S | 2WE | 9.1 | 8.92 | 9.28 | 5 | 100 | 0.5 | 3.8 |
| BZT52B10S | 2WF | 10 | 9.80 | 10.20 | 5 | 150 | 0.2 | 4.5 |
| BZT52B11S | 2WG | 11 | 10.78 | 11.22 | 5 | 150 | 0.1 | 5.4 |
| BZT52B12S | 2WH | 12 | 11.76 | 12.24 | 5 | 150 | 0.1 | 6.0 |
| BZT52B13S | 2WI | 13 | 12.74 | 13.26 | 5 | 170 | 0.1 | 7.0 |
| BZT52B15S | 2WJ | 15 | 14.70 | 15.30 | 5 | 200 | 0.1 | 9.2 |
| BZT52B16S | 2WK | 16 | 15.68 | 16.32 | 5 | 200 | 0.1 | 10.4 |
| BZT52B18S | 2WL | 18 | 17.64 | 18.36 | 5 | 225 | 0.1 | 12.4 |
| BZT52B20S | 2WM | 20 | 19.60 | 20.40 | 5 | 225 | 0.1 | 14.4 |
| BZT52B22S | 2WN | 22 | 21.56 | 22.44 | 5 | 250 | 0.1 | 16.4 |
| BZT52B24S | 2WO | 24 | 23.52 | 24.48 | 5 | 250 | 0.1 | 18.4 |
| BZT52B27S | 2WP | 27 | 26.46 | 27.54 | 2 | 300 | 0.1 | 21.4 |
| BZT52B30S | 2WQ | 30 | 29.40 | 30.60 | 2 | 300 | 0.1 | 24.4 |
| BZT52B33S | 2WR | 33 | 32.34 | 33.66 | 2 | 325 | 0.1 | 27.4 |
| BZT52B36S | 2WS | 36 | 35.28 | 36.72 | 2 | 350 | 0.1 | 30.4 |
| BZT52B39S | 2WT | 39 | 38.22 | 39.78 | 2 | 350 | 0.1 | 33.4 |
Maximum Ratings
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Forward Voltage (Note 2) @ IF = 10mA | VF | 0.9 | V |
| Power Dissipation (Note 1) | Pd | 200 | mW |
| Thermal Resistance from Junction to Ambient | RJA | 625 | /W |
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 ~ +150 | C |
Notes
- 1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm.
- 2. Short duration test pulse used to minimize self-heating effect.
- 3. f = 1kHz.
2410121531_JSCJ-BZT52B27S_C20607694.pdf
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