JSCJ CT308D 800S triacs featuring mesa glass passivated technology and plastic encapsulate thyristors
Key Attributes
Model Number:
CT308D-800S
Product Custom Attributes
Mfr. Part #:
CT308D-800S
Package:
TO-252-2
Product Description
Overview
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD CT308D TRIACs are NPNPN 5-layer structure devices featuring multi-layer metal electrodes and mesa glass passivated technology. They offer high junction temperature, high dV/dt and dI/dt, and good commutation performance, making them suitable for various control applications.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Material: Plastic-Encapsulate Thyristors
- Package Type: TO-252-2LK
Technical Specifications
| Symbol | Parameter | Test Condition | CT308D-600S/C | CT308D-800S/C | Unit |
| Repetitive peak off-state voltage | VDRM/VRRM | Tj=25 | 600 | 800 | V |
| VDRM/VRRM | VD=VDRM/VRRM, Tj=25 | - | - | A | |
| VDRM/VRRM | VD=VDRM/VRRM,Tj=125 | - | - | A | |
| dVD/dt | VD=67%VDRM, Gate Open Tj=125 | - | - | V/s | |
| RMS on-state current | IT(RMS) | - | 8 | 8 | A |
| Non repetitive surge peak on-state current | ITSM | Full sine wave Tj(init)=25, tp=20ms; Fig. 3,5 | 80 | 80 | A |
| I2t value | I2t | tp=10ms | 36 | 36 | A2s |
| Critical rate of rise of on-state current | dIT/dt | IG=2*IGT, tr10ns, F=120HZ, Tj=125 | 50 | 50 | A/s |
| Peak gate current | IGM | tp=20s, Tj=125 | 2 | 2 | A |
| Average gate power | PG(AV) | Tj=125 | 0.5 | 0.5 | W |
| Storage temperature | TSTG | - | -40~+150 | -40~+150 | |
| Operating junction temperature | Tj | - | -40~+125 | -40~+125 | |
| Gate trigger current | IGT | VD=12V, IT =0.1A, Tj=25, Fig. 6 | -- 1.3 | -- 1.3 | mA |
| -- 35 | -- 35 | mA | |||
| 35 | 35 | mA | |||
| Gate trigger voltage | VGT | VD=12V, IGT=0.1A, Tj=25, Fig. 6 | -- 1.55 | -- 1.55 | V |
| - 10 | - 10 | mA | |||
| 25 | 25 | mA | |||
| Non-triggering gate voltage | VGD | VD=VDRM, Tj=125 | 0.2 | 0.2 | V |
| - 5 | - 5 | mA | |||
| 5 | 5 | mA | |||
| Holding current | IH | - | 40 | 40 | mA |
| - 1 | - 1 | mA | |||
| 1 | 1 | mA | |||
| Latching current | IL | - | 80 | 80 | mA |
| - 5 | - 5 | mA | |||
| 5 | 5 | mA | |||
| On-state Voltage | VTM | ITM=10Atp=380 s , Fig. 4 | 1.55 | 1.55 | V |
| Junction to case (AC) | Rth (j-c) | - | 1.6 | 1.6 | /W |
| Junction to ambient | Rth (j-a) | - | 70 | 70 | /W |
2411121117_JSCJ-CT308D-800S_C527767.pdf
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