General Purpose PNP Transistor JSMSEMI MMBT3906 Medium Power Amplification and Switching Applications
Key Attributes
Model Number:
MMBT3906
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
250mW
Transition Frequency(fT):
250MHz
Type:
PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-
Mfr. Part #:
MMBT3906
Package:
SOT-23
Product Description
Product Overview
The MMBT3906 NP is a general-purpose PNP transistor featuring epitaxial planar die construction. It is ideal for medium power amplification and switching applications. A complementary NPN type, the MMBT3904, is also available. This transistor offers a collector current capability of -200mA and a low maximum voltage rating of -40V.
Product Attributes
- Brand: JSMICRO Semiconductor
- Model: MMBT3906 NP
- Package Type: SOT-23
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Max. | Unit |
| Maximum Ratings | |||||
| VCBO | Collector-base voltage | Open emitter | - | -40 | V |
| VCEO | Collector-emitter voltage | Open base | - | -40 | V |
| VEBO | Emitter-base voltage | Open collector | - | -6 | V |
| IC | Collector current (DC) | - | -200 | mA | |
| ICM | Peak collector current | - | -200 | mA | |
| IBM | Peak base current | - | -100 | mA | |
| Ptot | Total power dissipation | Tamb25C | 250 | mW | |
| Tstg | Storage temperature | -65 | +150 | C | |
| Tj | Junction temperature | 150 | C | ||
| Electrical Characteristics | |||||
| ICBO | Collector cut-off current | IE = 0; VCB = -30 V | - | -50 | nA |
| IEBO | Emitter cut-off current | IC = 0; VEB =- 6 V | - | -50 | nA |
| hFE | DC current gain | VCE = -1V; IC= -0.1mA | 60 | 300 | |
| IC = -1mA | 80 | - | |||
| IC = -10mA | 100 | - | |||
| IC = -50mA | 60 | - | |||
| IC = -100mA | 30 | - | |||
| VCEsat | Collector-emitter saturation voltage | IC = -10mA; IB = -1mA | - | -200 | mV |
| IC = -50mA; IB = -5mA | - | -300 | mV | ||
| VBEsat | Base-emitter saturation voltage | IC = -10mA; IB = -1mA | - | -850 | mV |
| IC = -50mA; IB = -5mA | - | -950 | mV | ||
| Cc | Collector capacitance | IE = Ie= 0; VCB = -5 V; f = 1 MHz | - | 4.5 | pF |
| Ce | Emitter capacitance | IC = Ic= 0; VEB = -500 mV; f = 1 MHz | - | 10 | pF |
| fT | Transition frequency | IC = -10mA; VCE = -20 V; f = 100MHz | 250 | - | MHz |
| NF | Noise figure | IC = -100A; VCE = -5V; RS = 1 k;f = 10Hz to15.7 kHz | - | 4 | dB |
| Switching times | ton (Turn-on time) | ICon= -10mA; IBon = -1mA; IBoff= -1mA | - | 65 | ns |
| td (delay time) | - | 35 | ns | ||
| tr (rise time) | - | 35 | ns | ||
| toff (turn-off time) | - | 300 | ns | ||
| ts (storage time) | - | 225 | ns | ||
| tf (fall time) | - | 75 | ns | ||
2306301522_JSMSEMI-MMBT3906_C916375.pdf
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