High Density Application Zener Diode JSCJ MMSZ4697 with Pb Free SOD123 Package and Wide Voltage Range
Key Attributes
Model Number:
MMSZ4697
Product Custom Attributes
Operating Junction Temperature Range:
-55℃~+150℃
Impedance(Zzt):
-
Diode Configuration:
Independent
Zener Voltage(Range):
9.5V~10.5V
Pd - Power Dissipation:
350mW
Zener Voltage(Nom):
10V
Mfr. Part #:
MMSZ4697
Package:
SOD-123
Product Description
Product Overview
The MMSZ4678-MMSZ4717 series are Zener diodes designed for high-density applications. They feature a wide Zener reverse voltage range, a small package size, and an ESD rating of Class 3 (>16 kV) per the Human Body Model. Pb-free packages are available.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD (JSCJ)
- Origin: China
- Package Type: SOD-123 Plastic-Encapsulate Diodes
- Certifications: PbFree Packages Available
Technical Specifications
| Model Range | Parameter | Symbol | Value | Unit | Notes |
|---|---|---|---|---|---|
| MMSZ4678-MMSZ4717 | Forward voltage @ IF =10mA | V F | 0.9 | V | |
| MMSZ4678-MMSZ4717 | Power Dissipation | PD | 350 | mW | |
| MMSZ4678-MMSZ4717 | Thermal Resistance, Junction to Ambient Air | RJA | 357 | /W | Device mounted on ceramic PCB;5.0mm7.0mm with pad areas 35 mm2 |
| MMSZ4678-MMSZ4717 | Junction and Storage Temperature Range | TJ,Tstg | -55 ~ +150 | ||
| MMSZ4678-MMSZ4717 | Reverse zener voltage @ IZT | VZ | Min Max | ||
| MMSZ4678-MMSZ4717 | Reverse current | IZT | |||
| MMSZ4678-MMSZ4717 | Reverse leakage current@ VR | IR | |||
| MMSZ4678-MMSZ4717 | Reverse voltage | VR | |||
| MMSZ4678-MMSZ4717 | Forward current | IF | |||
| MMSZ4678-MMSZ4717 | Forward voltage @ IF | VF |
Package Outline Dimensions (SOD-123)
| Symbol | Dimensions In Millimeters | Dimensions In Inches |
|---|---|---|
| A | 1.050 1.250 | 0.041 0.049 |
| A1 | 0.000 0.100 | 0.000 0.004 |
| A2 | 1.050 1.150 | 0.041 0.045 |
| b | 0.450 0.650 | 0.018 0.026 |
| c | 0.080 0.150 | 0.003 0.006 |
| D | 1.500 1.700 | 0.059 0.067 |
| E | 2.600 2.800 | 0.102 0.110 |
| E1 | 3.550 3.850 | 0.140 0.152 |
| L | ||
| L1 | 0.250 0.450 | 0.010 0.018 |
| 0 8 | 0 8 | |
| 0.500 REF | 0.020 REF |
2410121738_JSCJ-MMSZ4697_C2910058.pdf
Related Products
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW
Product OverviewThe S8050-L through S8050-H series are NPN general-purpose amplifiers manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. These components are designed for general amplification applications and feature an epoxy casing that meets UL-94 V-0 flammability rating. Halogen...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
