Glass Passivated Chip Zener Voltage Suppressor Diode JSCJ 1SMB5919B with Surge Protection Capability
Key Attributes
Model Number:
1SMB5919B
Product Custom Attributes
Pd - Power Dissipation:
3W
Zener Voltage(Range):
5.32V~5.88V
Zener Voltage(Nom):
5.6V
Mfr. Part #:
1SMB5919B
Package:
SMBG
Product Description
Product Overview
The 1SMB59XXB series are glass-passivated chip Zener Voltage Suppressor Diodes in SMB plastic packages. These devices offer stable voltage and a power dissipation of 3.0W. They are designed for various applications requiring reliable voltage regulation and surge protection.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Origin: JIANGSU, CHINA
- Material: Glass passivated chip, Plastic-Encapsulated Diodes
- Features: Stable Voltage, 3.0W Power Dissipation, Marking bar indicates cathode
- Applications: Voltage regulation, Surge protection
Technical Specifications
| Device | Zener Voltage (Vz) @ IZT (Volts) | Zener Impedance (ZZT @ IZT) () | Leakage Current (IR @ VR) (A) | Max Po r dissipation (Pd) (W) | Zener current (IZ) (mA) | IZM (A) |
|---|---|---|---|---|---|---|
| 1SMB5913B | 3.3 | 113.6 | 500 | 3.0 (TL=75) | 1 (at 3.3V) | 454 |
| 1SMB5914B | 3.6 | 104.2 | 500 | 3.0 (TL=75) | 1 (at 3.6V) | 416 |
| 1SMB5921B | 6.8 | 55.1 | 200 | 3.0 (TL=75) | 1 (at 6.8V) | 220 |
| 1SMB5922B | 7.5 | 50 | 400 | 3.0 (TL=75) | 0.5 (at 7.5V) | 200 |
| 1SMB5924B | 9.1 | 41.2 | 500 | 3.0 (TL=75) | 0.5 (at 9.1V) | 164 |
| 1SMB5928B | 13 | 28.8 | 550 | 3.0 (TL=75) | 9.9 (at 13V) | 115 |
| 1SMB5930B | 16 | 23.4 | 600 | 3.0 (TL=75) | 12.2 (at 16V) | 93 |
| 1SMB5932B | 20 | 18.7 | 650 | 3.0 (TL=75) | 15.2 (at 20V) | 75 |
| 1SMB5933B | 22 | 17 | 650 | 3.0 (TL=75) | 16.7 (at 22V) | 68 |
| 1SMB5937B | 33 | 11.4 | 800 | 3.0 (TL=75) | 25.1 (at 33V) | 45 |
| 1SMB5939B | 39 | 9.6 | 900 | 3.0 (TL=75) | 29.7 (at 39V) | 38 |
| 1SMB5940B | 43 | 8.7 | 950 | 3.0 (TL=75) | 32.7 (at 43V) | 34 |
| 1SMB5941B | 47 | 8 | 1000 | 3.0 (TL=75) | 35.8 (at 47V) | 31 |
| 1SMB5942B | 51 | 7.3 | 1100 | 3.0 (TL=75) | 38.8 (at 51V) | 29 |
| 1SMB5943B | 56 | 6.7 | 1300 | 3.0 (TL=75) | 42.6 (at 56V) | 26 |
| 1SMB5944B | 62 | 6 | 1500 | 3.0 (TL=75) | 47.1 (at 62V) | 24 |
| 1SMB5945B | 68 | 5.5 | 1700 | 3.0 (TL=75) | 51.7 (at 68V) | 22 |
| 1SMB5946B | 75 | 5 | 2000 | 3.0 (TL=75) | 56 (at 75V) | 20 |
| 1SMB5947B | 82 | 4.6 | 2500 | 3.0 (TL=75) | 62.2 (at 82V) | 18 |
| 1SMB5948B | 91 | 4.1 | 3000 | 3.0 (TL=75) | 69.2 (at 91V) | 16 |
| 1SMB5949B | 100 | 3.7 | 3100 | 3.0 (TL=75) | 76 (at 100V) | 15 |
| 1SMB5950B | 110 | 3.4 | 4000 | 3.0 (TL=75) | 83.6 (at 110V) | 13 |
| 1SMB5951B | 120 | 3.1 | 4500 | 3.0 (TL=75) | 91.2 (at 120V) | 12 |
| 1SMB5952B | 130 | 2.9 | 5000 | 3.0 (TL=75) | 98.8 (at 130V) | 11 |
| 1SMB5953B | 150 | 2.5 | 6000 | 3.0 (TL=75) | 114 (at 150V) | 10 |
| 1SMB5954B | 160 | 2.3 | 6500 | 3.0 (TL=75) | 121.6 (at 160V) | 9 |
| 1SMB5955B | 180 | 2.1 | 7000 | 3.0 (TL=75) | 136.8 (at 180V) | 8 |
| 1SMB5956B | 200 | 1.9 | 8000 | 3.0 (TL=75) | 152 (at 200V) | 7 |
Limiting Values
| Item | Symbol | Unit | Conditions | Max |
|---|---|---|---|---|
| Junction and Storage Temperature Range | TJ,Tstg | -55 ~ +150 | ||
| Po r dissipation | Pd | W | TL=75 | 3.0 |
| Thermal resistance Between junction to ambient | RJA | /W | 226 | |
| Thermal resistance Between junction to lead | RJL | /W | 25 | |
| Forward voltage | VF | V | IF=200mA | 1.5 |
2212151130_JSCJ-1SMB5919B_C5293585.pdf
Related Products
power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW
Sensata B-2T, B-2 Series Power Modules The Sensata B-2T and B-2 Series Power Modules offer versatile solutions for AC or DC variable voltage output applications, capable of handling up to 15KW. These modules feature eight circuit options and are UL Recognized (E72445), providing reliable performance ...
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
