High power audio linear application transistor JSMSEMI MJ15024G JSM NPN power transistor TO3 package
Key Attributes
Model Number:
MJ15024G-JSM
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
250uA
Pd - Power Dissipation:
250W
Transition Frequency(fT):
4MHz
Type:
NPN
Current - Collector(Ic):
16A
Collector - Emitter Voltage VCEO:
250V
Operating Temperature:
-
Mfr. Part #:
MJ15024G-JSM
Package:
TO-3
Product Description
Product Overview
The MJ15022/15024 are NPN power transistors designed for high power audio, disk head positioners, and other linear applications. They feature a TO-3 package, complement to MJ15023/MJ15025, excellent safe operating area, and high DC current gain.
Product Attributes
- Brand: JSMICRO Semiconductor
- Package Type: TO-3
- Complementary Types: MJ15023, MJ15025
Technical Specifications
| Symbol | Parameter | Conditions | MJ15022 | MJ15024 | Unit |
| Absolute Maximum Ratings | |||||
| VCBO | Collector-base voltage | Open emitter | 350 | 400 | V |
| VCEO | Collector-emitter voltage | Open base | 200 | 250 | V |
| VEBO | Emitter-base voltage | Open collector | 5 | V | |
| IC | Collector current | 16 | A | ||
| ICM | Collector current-peak | 30 | A | ||
| IB | Base current | 5 | A | ||
| PD | Total power dissipation | TC=25 | 250 | W | |
| Tj | Junction temperature | 150 | |||
| Tstg | Storage temperature | -65~200 | |||
| Thermal Characteristics | |||||
| Rth j-c | Thermal resistance junction to case | 0.70 | /W | ||
| Characteristics | |||||
| VCEO(SUS) | Collector-emitter sustaining voltage | Tj=25 unless otherwise specified | 200 | 250 | V |
| VCEsat-1 | Collector-emitter saturation voltage | IC=8A; IB=0.8A | 1.4 | V | |
| VCEsat-2 | Collector-emitter saturation voltage | IC=16A; IB=3.2A | 4.0 | V | |
| VBE | Base-emitter on voltage | IC=8A ; VCE=4V | 2.2 | V | |
| ICEO | Collector cut-off current | VCE=150V; IB=0 (MJ15022) VCE=200V; IB=0 (MJ15024) | 0.5 | mA | |
| ICEX | Collector cut-off current | VCE=200V; VBE(off)=1.5V (MJ15022) VCE=250V; VBE(off)=1.5V (MJ15024) | 0.25 | mA | |
| IEBO | Emitter cut-off current | VEB=5V; IC=0 | 0.5 | mA | |
| hFE-1 | DC current gain | IC=8A ; VCE=4V | 15 | 60 | |
| hFE-2 | DC current gain | IC=16A ; VCE=4V | 5.0 | ||
| IS/b | Second breakdown collector current with base forward biased | VCE=50Vdc,t=0.5 s, Nonrepetitive VCE=80Vdc,t=0.5 s, Nonrepetitive | 2.0 | A | |
| COB | Output capacitance | IE=0 ; VCB=10V;f=1.0MHz | 500 | pF | |
| fT | Transition frequency | IC=1A ; VCE=10V;f=1.0MHz | 4 | MHz | |
2402231636_JSMSEMI-MJ15024G-JSM_C19673771.pdf
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