Plastic Encapsulated Zener Diode JSCJ BZT52B5V6 SOD123 Package Planar Die Semiconductor Device
Key Attributes
Model Number:
BZT52B5V6
Product Custom Attributes
Impedance(Zzt):
40Ω
Diode Configuration:
Independent
Zener Voltage(Range):
5.49V~5.71V
Pd - Power Dissipation:
350mW
Zener Voltage(Nom):
5.6V
Impedance(Zzk):
400Ω
Mfr. Part #:
BZT52B5V6
Package:
SOD-123
Product Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes
The BZT52B2V4-BZT52B43 series are Zener diodes featuring planar die construction and 350mW power dissipation on a ceramic PCB. They are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. Lead-free versions are available.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Product Type: ZENER DIODE
- Package: SOD-123
- Construction: Planar Die
- Encapsulation: Plastic
- Availability: Lead Free Version Available
Technical Specifications
| Type Number | Type Code | Nominal Zener Voltage (V) | Zener Voltage Range Min (V) | Zener Voltage Range Max (V) | Test Current (mA) | Maximum Zener Impedance () | Maximum Reverse Current (A) | Typical Temperature Coefficent (mV/C) |
|---|---|---|---|---|---|---|---|---|
| BZT52B2V4 | 2WX | 2.4 | 2.35 | 2.45 | 5 | 600 | 50 | -3.5 |
| BZT52B2V7 | 2W1 | 2.7 | 2.65 | 2.75 | 5 | 600 | 20 | -3.5 |
| BZT52B3V0 | 2W2 | 3.0 | 2.94 | 3.06 | 5 | 600 | 10 | -3.5 |
| BZT52B3V3 | 2W3 | 3.3 | 3.23 | 3.37 | 5 | 600 | 5 | -3.5 |
| BZT52B3V6 | 2W4 | 3.6 | 3.53 | 3.67 | 5 | 600 | 5 | -3.5 |
| BZT52B3V9 | 2W5 | 3.9 | 3.82 | 3.98 | 5 | 600 | 3 | -3.5 |
| BZT52B4V3 | 2W6 | 4.3 | 4.21 | 4.39 | 5 | 600 | 3 | -3.5 |
| BZT52B4V7 | 2W7 | 4.7 | 4.61 | 4.79 | 5 | 500 | 3 | -3.5 |
| BZT52B5V1 | 2W8 | 5.1 | 5.00 | 5.20 | 5 | 480 | 2 | -2.7 |
| BZT52B5V6 | 2W9 | 5.6 | 5.49 | 5.71 | 5 | 400 | 1 | -2.0 |
| BZT52B6V2 | 2WA | 6.2 | 6.08 | 6.32 | 5 | 150 | 3 | 0.4 |
| BZT52B6V8 | 2WB | 6.8 | 6.66 | 6.94 | 5 | 80 | 2 | 1.2 |
| BZT52B7V5 | 2WC | 7.5 | 7.35 | 7.65 | 5 | 80 | 1 | 2.5 |
| BZT52B8V2 | 2WD | 8.2 | 8.04 | 8.36 | 5 | 80 | 0.7 | 3.2 |
| BZT52B9V1 | 2WE | 9.1 | 8.92 | 9.28 | 5 | 100 | 0.5 | 3.8 |
| BZT52B10 | 2WF | 10 | 9.80 | 10.20 | 5 | 150 | 0.2 | 4.5 |
| BZT52B11 | 2WG | 11 | 10.78 | 11.22 | 5 | 150 | 0.1 | 5.4 |
| BZT52B12 | 2WH | 12 | 11.76 | 12.24 | 5 | 150 | 0.1 | 6.0 |
| BZT52B13 | 2WI | 13 | 12.74 | 13.26 | 5 | 170 | 0.1 | 7.0 |
| BZT52B15 | 2WJ | 15 | 14.70 | 15.30 | 5 | 200 | 0.1 | 9.2 |
| BZT52B16 | 2WK | 16 | 15.68 | 16.32 | 5 | 200 | 0.1 | 10.4 |
| BZT52B18 | 2WL | 18 | 17.64 | 18.36 | 5 | 225 | 0.1 | 12.4 |
| BZT52B20 | 2WM | 20 | 19.60 | 20.40 | 5 | 225 | 0.1 | 14.4 |
| BZT52B22 | 2WN | 22 | 21.56 | 22.44 | 5 | 250 | 0.1 | 16.4 |
| BZT52B24 | 2WO | 24 | 23.52 | 24.48 | 5 | 250 | 0.1 | 18.4 |
| BZT52B27 | 2WP | 27 | 26.46 | 27.54 | 2 | 300 | 0.1 | 21.4 |
| BZT52B30 | 2WQ | 30 | 29.40 | 30.60 | 2 | 300 | 0.1 | 24.4 |
| BZT52B33 | 2WR | 33 | 32.34 | 33.66 | 2 | 325 | 0.1 | 27.4 |
| BZT52B36 | 2WS | 36 | 35.28 | 36.72 | 2 | 350 | 0.1 | 30.4 |
| BZT52B39 | 2WT | 39 | 38.22 | 39.78 | 2 | 350 | 0.1 | 33.4 |
| BZT52B43 | 2WU | 43 | 41.16 | 42.84 | 2 | 350 | 0.1 | 36.4 |
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Forward Voltage (Note 2) @ IF = 10mA | VF | 0.9 | V |
| Power Dissipation(Note 1) | Pd | 350 | mW |
| Thermal Resistance from Junction to Ambient | RJA | 357 | /W |
| Junction Temperature | Tj | 150 | |
| Storage Temperature Range | Tstg | -55 ~ +150 |
2410121255_JSCJ-BZT52B5V6_C78578.pdf
Related Products
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Surface mount digital transistor YANGJIE DTC114YE with built in resistors and RoHS compliant halogen free epoxy
Product OverviewThe DTC114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It features a moisture sensitivity level of 1 and an epoxy that meets UL-94 V-0 flammability rating and is halogen-free. This product is ...
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
