Low Frequency Amplifier Transistor JSMSEMI A1015 Silicon Epitaxial Planar with High Current and Voltage Ratings
Key Attributes
Model Number:
A1015
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
80MHz
Type:
PNP
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
A1015
Package:
SOT-23
Product Description
Product Overview
The A1015 is a Silicon Epitaxial Planar Transistor designed as a complementary device to the 2SC1815. It offers excellent HFE linearity, high voltage and current capabilities, and low noise performance. With a Collector-Emitter voltage (BVCEO) of -50V, it is suitable for low frequency, low noise amplifier applications.
Product Attributes
- Brand: JSMICRO Semiconductor
- Package Type: SOT-23
- Complementary To: 2SC1815
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Voltage | VCBO | -50 | V | |||
| Collector-Emitter Voltage | VCEO | -50 | V | |||
| Emitter-Base Voltage | VEBO | -5 | V | |||
| Collector Current (Continuous) | IC | -150 | mA | |||
| Collector Dissipation | PC | @ Ta=25 | 400 | mW | ||
| Junction and Storage Temperature | Tj,Tstg | -55 | +150 | |||
| Collector-base breakdown voltage | V(BR)CBO | IC=-100A,IE=0 | -50 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-0.1mA,IB=0 | -50 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-10A,IC=0 | -5 | V | ||
| Collector cut-off current | ICBO | VCB=-50V,IE=0 | -0.1 | A | ||
| Collector cut-off current | ICEO | VCE=-50V,IB=0 | -0.1 | A | ||
| Emitter cut-off current | IEBO | VEB=-5V,IC=0 | -0.1 | A | ||
| DC current gain | hFE | VCE=-6V,IC=-2mA | 70 | 400 | ||
| DC current gain | hFE | VCE=-6V,IC=-150mA | 25 | 80 | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=-100 mA, IB=- 10mA | -0.1 | -0.3 | V | |
| Base-emitter saturation voltage | VBE(sat) | IC=-100 mA, IB= -10mA | -1.1 | V | ||
| Transition frequency | fT | VCE=-10V, IC= -1mA, f=30MHz | 80 | MHz |
hFE Classification
| Rank | Range |
| L | 130-200 |
| H | 200-400 |
Package Information
| Device | Package | Shipping |
| A1015 | SOT-23 | 3000/Tape&Reel |
Package Outline (SOT-23)
| Dim | Min | Max | Typical |
| A | 2.70 | 3.10 | |
| B | 1.10 | 1.50 | |
| C | 1.0 | ||
| D | 0.4 | ||
| E | 0.35 | 0.48 | |
| G | 1.80 | 2.00 | |
| H | 0.02 | 0.1 | |
| J | 0.1 | ||
| K | 2.20 | 2.60 |
2306301522_JSMSEMI-A1015_C916379.pdf
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