Low noise NPN silicon epitaxial transistor JSMSEMI PBR951 ideal for demanding RF and CATV applications
Key Attributes
Model Number:
PBR951
Product Custom Attributes
Emitter-Base Voltage(Vebo):
3V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
7GHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
10V
Operating Temperature:
-
Mfr. Part #:
PBR951
Package:
SOT-23
Product Description
Product Overview
The PBR951 is an NPN silicon epitaxial transistor engineered for low-noise amplification across VHF, UHF, and CATV bands. It offers excellent dynamic range and favorable current characteristics, making it suitable for demanding RF applications.
Product Attributes
- Brand: JSMICRO Semiconductor
- Model: PBR951
- Type: NPN silicon epitaxial transistor
- Marking: W2W
- Origin: China (implied by website and page numbering)
Technical Specifications
| Characteristic | Symbol | Min. | Typ. | Max. | Unit | Test Conditions |
| Collector Cutoff Current | ICBO | 1.0 | µA | VCB = 10 V, IE = 0 | ||
| Emitter Cutoff Current | IEBO | 1.0 | µA | VEB = 1.0 V, IC = 0 | ||
| DC Current Gain | hFE* | 50 | 120 | 300 | VCE = 10 V, IC = 20 mA | |
| Gain Bandwidth Product | fT | 7 | GHz | VCE = 10 V, IC = 20 mA | ||
| Feed-Back Capacitance | Cre** | 0.55 | 1.0 | pF | VCB = 10 V, IE = 0, f = 1.0 MHz | |
| Insertion Power Gain | |S21e|² | 2 | 11.5 | dB | VCE = 10 V, IC = 20 mA, f = 1.0 GHz | |
| Noise Figure | NF | 1.1 | 2.0 | dB | VCE = 10 V, IC = 7 mA, f = 1.0 GHz |
Absolute Maximum Ratings
| Parameter | Symbol | Rating | Unit | Conditions |
| Collector to Base Voltage | VCBO | 20 | V | |
| Collector to Emitter Voltage | VCEO | 12 | V | |
| Emitter to Base Voltage | VEBO | 3.0 | V | |
| Collector Current | IC | 100 | mA | |
| Total Power Dissipation | PT | 200 | mW | TA = 25 °C |
| Junction Temperature | Tj | 150 | °C | |
| Storage Temperature | Tstg | -65 to +150 | °C |
2401051645_JSMSEMI-PBR951_C963400.pdf
Related Products
Surface Mounted Rectifier ZHIDE US3M Series High Voltage 1000V Rectifier for Electronic Circuits
Product OverviewThe US3A-US3M series are surface-mounted high-efficiency rectifiers designed for general-purpose applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding environments. These rectifiers are guaranteed for ...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
