N channel MOSFET transistor JSCJ 2N7002K with rugged construction and high saturation current
Key Attributes
Model Number:
2N7002K
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
340mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
3Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@1mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 N-channel
Output Capacitance(Coss):
30pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
40pF
Gate Charge(Qg):
-
Mfr. Part #:
2N7002K
Package:
SOT-23
Product Description
Product Overview
The 2N7002K is an N-channel MOSFET in a SOT-23 package, designed for voltage-controlled small signal switching applications. It features a high-density cell design for low RDS(on), rugged and reliable construction, and high saturation current capability. This device is ESD protected and suitable for load switching in portable devices and DC/DC converters.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Package: SOT-23
- Molding Compound: Normal device (or Green molding compound device if indicated by solid dot)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | VDS | VGS = 0V, ID =250A | 60 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS =VGS, ID =1mA | 1 | 1.3 | 2.5 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS =48V,VGS = 0V | 1 | A | ||
| Gate Source leakage current | IGSS1 | VGS =20V, VDS = 0V | 10 | A | ||
| Gate Source leakage current | IGSS2 | VGS =10V, VDS = 0V | 200 | nA | ||
| Gate Source leakage current | IGSS3 | VGS =5V, VDS = 0V | 100 | nA | ||
| Drain-Source On-Resistance | RDS(on) | VGS = 4.5V, ID =200mA | 1.1 | 3 | ||
| Drain-Source On-Resistance | RDS(on) | VGS =10V,ID =500mA | 0.9 | 2.5 | ||
| Diode Forward Voltage | VSD | VGS=0V, IS=300mA | 1.5 | V | ||
| Recovered charge | Qr | VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/S | 30 | nC | ||
| Input Capacitance | Ciss | VDS =10V,VGS =0V,f =1MHz | 40 | pF | ||
| Output Capacitance | Coss | VDS =10V,VGS =0V,f =1MHz | 30 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =10V,VGS =0V,f =1MHz | 10 | pF | ||
| Turn-On Delay Time | td(on) | VGS=10V,VDD=50V,RG=50, RGS=50, RL=250 | 10 | ns | ||
| Turn-Off Delay Time | td(off) | VGS=10V,VDD=50V,RG=50, RGS=50, RL=250 | 15 | ns | ||
| Reverse recovery Time | trr | VGS=0V,IS=300mA,VR=25V, dls/dt=-100A/S | 30 | ns | ||
| Gate-Source Breakdown Voltage | BVGSO | Igs=1mA (Open Drain) | 21.5 | 30 | V |
2111241030_JSCJ-2N7002K_C2910165.pdf
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