Low voltage drive N channel MOSFET JSCJ 2SK3018 in SOT 23 package ideal for drive circuit integration
Key Attributes
Model Number:
2SK3018
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
13Ω@2.5V,1mA
Gate Threshold Voltage (Vgs(th)):
800mV
Reverse Transfer Capacitance (Crss@Vds):
4pF
Number:
1 N-channel
Input Capacitance(Ciss):
13pF
Pd - Power Dissipation:
350mW
Mfr. Part #:
2SK3018
Package:
SOT-23
Product Description
Product Overview
The 2SK3018 is an N-channel MOSFET in a SOT-23 package from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. It features low on-resistance and fast switching speed, making it ideal for portable equipment due to its low voltage drive capability. The device is easily integrated into drive circuits and can be paralleled.
Product Attributes
- Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
- Package Type: SOT-23
- Material: Plastic-Encapsulate
- Marking: KN
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units |
| Drain-Source Breakdown Voltage | VDS | VGS = 0V, ID = 10A | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =30V,VGS = 0V | 0.2 | A | ||
| Gate Source leakage current | IGSS | VGS =20V, VDS = 0V | 2 | A | ||
| Gate Threshold Voltage | VGS(th) | VDS = 3V, ID =100A | 0.8 | 1.5 | V | |
| Drain-Source On-Resistance | RDS(on) | VGS = 4V, ID =10mA | 8 | |||
| Drain-Source On-Resistance | RDS(on) | VGS =2.5V,ID =1mA | 13 | |||
| Forward Transconductance | gFS | VDS =3V, ID = 10mA | 20 | mS | ||
| Input Capacitance | Ciss | VDS =5V,VGS =0V,f =1MHz | 13 | pF | ||
| Output Capacitance | Coss | VDS =5V,VGS =0V,f =1MHz | 9 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =5V,VGS =0V,f =1MHz | 4 | pF | ||
| Turn-On Delay Time | td(on) | VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500 | 15 | ns | ||
| Rise Time | tr | VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500 | 35 | ns | ||
| Turn-Off Delay Time | td(off) | VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500 | 80 | ns | ||
| Fall Time | tf | VGS =5V, VDD =5V, ID =10mA, Rg=10, RL=500 | 80 | ns | ||
| Continuous Drain Current | ID | (Ta = 25C unless otherwise noted) | 0.1 | A | ||
| Power Dissipation | PD | (Ta = 25C unless otherwise noted) | 0.35 | W | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -55 | ~+150 | |||
| Thermal Resistance, Junction-to-Ambient | RJA | 357 | /W | |||
| Gate-Source Voltage | VGS | 20 | V |
1809212243_JSCJ-2SK3018_C8562.pdf
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