N Channel Power MOSFET JSCJ CJU50N06A with Low Reverse Transfer Capacitance and Avalanche Energy Rating
Key Attributes
Model Number:
CJU50N06A
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+150℃
RDS(on):
25mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
220pF
Number:
1 N-channel
Output Capacitance(Coss):
240pF
Pd - Power Dissipation:
75W
Input Capacitance(Ciss):
3.4nF
Gate Charge(Qg):
56nC@10V
Mfr. Part #:
CJU50N06A
Package:
TO-252-2L
Product Description
Product Overview
The CJU50N06A is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of power switching applications. Key features include an excellent package for good heat dissipation, ultra-low gate charge, low reverse transfer capacitance, fast switching capability, and specified avalanche energy.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Model: CJU50N06A
- Package: TO-252-2L
- Material: Plastic-Encapsulate
- Color: Green molding compound device (if solid dot present)
- Origin: China (implied by manufacturer name and website)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 60 | V | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS =48V, VGS =0V | 1.0 | A | ||
| On Characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250A | 1.0 | 1.6 | 2.5 | V |
| Static drain-source on-state resistance | RDS(on) | VGS =10V, ID =20A | 13 | m | ||
| Static drain-source on-state resistance | RDS(on) | VGS =4.5V, ID =10A | 17 | m | ||
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =25V,VGS =0V, f =1MHz | 130 | pF | ||
| Output capacitance | Coss | 100 | pF | |||
| Reverse transfer capacitance | Crss | 75 | pF | |||
| Switching Characteristics | ||||||
| Total gate charge | Qg | VGS=10V, VDS=30V, ID=10A | 18 | nC | ||
| Gate-source charge | Qgs | 25 | nC | |||
| Gate-drain charge | Qgd | 8.2 | nC | |||
| Turn-on delay time | td(on) | VDS=30V,RL=2.5, VGS=10V,RG=3 | 56 | ns | ||
| Turn-on rise time | tr | 7.0 | ns | |||
| Turn-off delay time | td(off) | 16 | ns | |||
| Turn-off fall time | tf | 8.2 | ns | |||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=20A | 1.2 | V | ||
| Continuous drain-source diode forward current | IS | 50 | A | |||
| Pulsed drain-source diode forward current | ISM | 200 | A | |||
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | Ta=25 unless otherwise noted | 60 | V | ||
| Gate-Source Voltage | VGS | Ta=25 unless otherwise noted | 20 | V | ||
| Continuous Drain Current | ID | Ta=25 unless otherwise noted | 50 | A | ||
| Pulsed Drain Current | IDM | Ta=25 unless otherwise noted | 200 | A | ||
| Single Pulsed Avalanche Energy | EAS | 130 | mJ | |||
| Power Dissipation | PD | TC=25 | 100 | W | ||
| Thermal Resistance | ||||||
| Junction to Ambient | RJA | TC=25, mounted on 1 in FR-4 board | 1700 | /W | ||
| Junction to Case | RJC | TC=25 | 1.67 | /W | ||
| Operating Temperature Range | ||||||
| Operating Junction and Storage Temperature | TJ ,Tstg | -55 | +150 | |||
2409302233_JSCJ-CJU50N06A_C3031931.pdf
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