N Channel Power MOSFET JSCJ CJAC150N03A Offering Low Gate Charge and High Energy Avalanche Capability
Key Attributes
Model Number:
CJAC150N03A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
150A
RDS(on):
2.7mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.5nF
Number:
1 N-channel
Output Capacitance(Coss):
1.8nF
Input Capacitance(Ciss):
20nF
Pd - Power Dissipation:
130W
Gate Charge(Qg):
82nC@10V
Mfr. Part #:
CJAC150N03A
Package:
PDFNWB5x6-8L
Product Description
Product Overview
The CJAC150N03A is an N-Channel Power MOSFET utilizing trench technology for excellent RDS(ON) and low gate charge. It offers high power and current handling capabilities, making it suitable for load switching and general-purpose applications requiring high density cell design for ultra-low RDS(ON). This lead-free product ensures good stability and uniformity with high EAS and excellent package for heat dissipation.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Part Number: CJAC150N03A
- Package: PDFNWB5x6-8L
- Material: Plastic-Encapsulate MOSFETS
- Certifications: Lead free product is acquired
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | 150 | A | |||
| Pulsed Drain Current | IDM | 600 | A | |||
| Single Pulsed Avalanche Energy | EAS | 325 | mJ | |||
| Power Dissipation | PD | 130 | W | |||
| Thermal Resistance from Junction to Ambient | RJA | 62.5 | ℃/W | |||
| Thermal Resistance from Junction to Case | RJC | 0.96 | ℃/W | |||
| Junction and Storage Temperature Range | TJ, Tstg | -55 | +150 | ℃ | ||
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250µA | 30 | V | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =±20V | ±100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS =24V, VGS =0V | 1.0 | µA | ||
| On Characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250µA | 1.0 | 1.6 | 2.5 | V |
| Static drain-source on-state resistance | RDS(on) | VGS =10V, ID =30A | 1.4 | mΩ | ||
| Static drain-source on-state resistance | RDS(on) | VGS =4.5V, ID =10A | 2.0 | mΩ | ||
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =15V,VGS =0V, f =100KHz | 10300 | pF | ||
| Output capacitance | Coss | 806 | pF | |||
| Reverse transfer capacitance | Crss | 1500 | pF | |||
| Switching Characteristics | ||||||
| Total gate charge | Qg | VGS=10V, VDS=15V, ID=24A | 20000 | nC | ||
| Gate-source charge | Qgs | 1800 | nC | |||
| Gate-drain charge | Qg d | 1500 | nC | |||
| Turn-on delay time | td(on) | VDS=15V, VGS=10V,RG=1Ω, RL=0.75Ω | 82 | ns | ||
| Turn-on rise time | tr | 22 | ns | |||
| Turn-off delay time | td(off) | 31 | ns | |||
| Turn-off fall time | tf | 58 | ns | |||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=10A | 1.2 | V | ||
| Continuous drain-source diode forward current | IS | 150 | A | |||
| Pulsed drain-source diode forward current | ISM | 600 | A | |||
2410121714_JSCJ-CJAC150N03A_C2963225.pdf
Related Products
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
