Plastic Package N Channel MOSFET JSCJ CJAB55N03S Suitable for High Frequency Circuits and UPS Systems
Key Attributes
Model Number:
CJAB55N03S
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
55A
Operating Temperature -:
-55℃~+150℃
RDS(on):
9.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
240pF
Number:
1 N-channel
Output Capacitance(Coss):
295pF
Pd - Power Dissipation:
40W
Input Capacitance(Ciss):
2.8nF
Gate Charge(Qg):
50nC@10V
Mfr. Part #:
CJAB55N03S
Package:
PDFNWB3.3x3.3-8L
Product Description
Product Overview
The CJAB55N03S is an N-Channel Power MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. Utilizing advanced trench technology, it offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications including battery switches, load switches, SMPS, general purpose applications, hard switched and high frequency circuits, and Uninterruptible Power Supplies. Its high density cell design ensures ultra low RDS(ON), and it is fully characterized for avalanche voltage and current with good stability and uniformity.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Part Number: CJAB55N03S
- Package Type: Plastic-Encapsulate MOSFETS
- Origin: China (implied by manufacturer name)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250uA | 30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =24V, VGS =0V | 1.0 | A | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| On Characteristics | ||||||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250uA | 2.5 | V | ||
| Static drain-source on-state resistance | RDS(on) | VGS =10V, ID =20A | 3.8 | m | ||
| VGS =4.5V, ID =20A | 5.9 | 9.5 | m | |||
| Forward transconductance | gFS | VDS =10V, ID =20A | 55 | S | ||
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS =15V,VGS =0V, f =1MHz | 2800 | pF | ||
| Output capacitance | Coss | 295 | ||||
| Reverse transfer capacitance | Crss | 240 | ||||
| Switching Characteristics | ||||||
| Total gate charge | Qg | VGS=10V, VDS=25V, ID=14A | 50 | nC | ||
| Gate-source charge | Qgs | 6.2 | ||||
| Gate-drain charge | Qg d | 11 | ||||
| Turn-on delay time | td(on) | VDS=15V,RL=0.75, VGS=10V,RG=3 | 5.5 | ns | ||
| Turn-on rise time | tr | 1.0 | ||||
| Turn-off delay time | td(off) | 12 | ||||
| Turn-off fall time | tf | 36 | ||||
| Drain-Source Diode Characteristics | ||||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=20A | 1.2 | V | ||
| Continuous drain-source diode forward current | IS | 55 | A | |||
| Pulsed drain-source diode forward current | ISM | 220 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | 55 | A | |||
| Pulsed Drain Current | IDM | 220 | A | |||
| Maximum Power Dissipation | PD | 40 | W | |||
| Single Pulsed Avalanche Energy | EAS | 120 | mJ | |||
| Thermal Resistance from Junction to Case | RJC | 3.1 | /W | |||
| Thermal Resistance from Junction to Ambient | RJA | 83.3 | /W | |||
| Operating Junction and Storage Temperature Range | TJ ,Tstg | -55 | +150 | |||
2410121913_JSCJ-CJAB55N03S_C2973797.pdf
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