Low RDS ON P Channel MOSFET JSCJ CJQ60P05 with Excellent Avalanche Voltage and Current Characteristics
Key Attributes
Model Number:
CJQ60P05
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-
RDS(on):
58mΩ@10V,5A
Gate Threshold Voltage (Vgs(th)):
3.5V
Reverse Transfer Capacitance (Crss@Vds):
110pF@20V
Number:
1 P-Channel
Input Capacitance(Ciss):
1.45nF@20V
Pd - Power Dissipation:
-
Gate Charge(Qg):
26nC@10V
Mfr. Part #:
CJQ60P05
Package:
SOP-8
Product Description
Product Overview
The CJQ60P05 is a P-Channel Enhancement Mode Power MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. Its high-density cell design ensures ultra-low RDS(ON), and it is fully characterized for avalanche voltage and current. The SOP8 package provides good heat dissipation, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and DC-DC converters.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Package: SOP8
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | -5 | A | |||
| Pulsed Drain Current | IDM | (Note 1) | -25 | A | ||
| Operating Junction Temperature | TJ | SOP8 | 150 | °C | ||
| Storage Temperature Range | TSTG | -55 | ~+150 | °C | ||
| Lead Temperature for Soldering Purposes | TL | (1/8'' form case for 10s) | 260 | °C | ||
| Thermal Resistance, Junction-to-Ambient | RJA | (Note 2) | 100 | /W °C | ||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250µA | -60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-60V,VGS=0V | -1 | µA | ||
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | ±100 | nA | ||
| On Characteristics (Note 3) | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=-250µA | -1.5 | -3.5 | V | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-10V, ID=-5A | 80 | mΩ | ||
| Forward Transconductance | gFS | VDS=-15V,ID=-5A | 5 | S | ||
| Dynamic Characteristics (Note4) | ||||||
| Input Capacitance | Clss | 1450 | pF | |||
| Output Capacitance | Coss | 145 | pF | |||
| Reverse Transfer Capacitance | Crss | VDS=-20V,VGS=0V, f=1.0MHz | 110 | pF | ||
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | 8 | ns | |||
| Turn-on Rise Time | tr | 9 | ns | |||
| Turn-Off Delay Time | td(off) | 65 | ns | |||
| Turn-Off Fall Time | tf | VDD=-30V, ,RL=30Ω, VGS=-10V,RGEN=6Ω | 30 | ns | ||
| Total Gate Charge | Qg | 26 | nC | |||
| Gate-Source Charge | Qgs | 4.5 | nC | |||
| Gate-Drain Charge | Qg d | VDS=-30V,ID=-5A, VGS=-10V | 7 | nC | ||
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=-3A (Note 3) | -1.2 | V | ||
| Diode Forward Current | IS | (Note 2) | -5 | A | ||
2410121715_JSCJ-CJQ60P05_C504137.pdf
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