Plastic Encapsulate MOSFET JSCJ CJAC50N06 Designed for Load Switching and High Pulsed Drain Current
Key Attributes
Model Number:
CJAC50N06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
298pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
3.89nF@25V
Pd - Power Dissipation:
-
Gate Charge(Qg):
89nC@10V
Mfr. Part #:
CJAC50N06
Package:
PDFNWB5x6-8L
Product Description
Product Overview
The CJAC50N06, a Plastic-Encapsulate MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, offers excellent RDS(ON), low gate charge, and operation with low gate voltages. Its design provides excellent heat dissipation and fast switching capabilities, making it suitable for load switching and PWM applications.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Model: CJAC50N06
- Material: Plastic-Encapsulate
- Color: Normal device (if no solid dot)
- Origin: China (implied by manufacturer location)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | ±25 | V | |||
| Continuous Drain Current | ID | 50 | A | |||
| Pulsed Drain Current | IDM | 180 | A | |||
| Single Pulsed Avalanche Energy | EAS | 200 | mJ | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | ||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250µA | 60 | V | ||
| Zero gate voltage drain current | IDSS | VDS =60V, VGS =0V | 1 | µA | ||
| Gate-body leakage current | IGSS | VDS =0V, VGS =± 25V | ±100 | nA | ||
| Gate-threshold voltage | VGS(th) | VDS =VGS, ID =250µA | 2.0 | 2.9 | 4.0 | V |
| Static drain-source on-sate resistance | RDS(on) | VGS =10V, ID =20A | 5.3 | mΩ | ||
| Forward transconductance | gFS | VDS =10V, ID =15A | 20 | S | ||
| Input capacitance | Ciss | VDS =25V,VGS =0V, f =1MHz | 3890 | pF | ||
| Output capacitance | Coss | 297 | ||||
| Reverse transfer capacitance | Crss | 298 | ||||
| Total gate charge | Qg | VGS=10V, VDS=50V, ID=25A | 89 | nC | ||
| Gate-source charge | Qgs | VGS=10V, VDS=50V, ID=25A | 16 | nC | ||
| Gate-drain charge | Qg | VGS=10V, VDS=50V, ID=25A | 37 | nC | ||
| Turn-on delay time | td(on) | VDD=30V,ID=2A, VGS=10V,RL=15Ω RG=2.5Ω | 21 | ns | ||
| Turn-on rise time | tr | 31 | ||||
| Turn-off delay time | td(off) | 63 | ||||
| Turn-off fall time | tf | 29 | ||||
| Drain-source diode forward voltage | VSD | VGS =0V, IS=25A | 1.0 | V | ||
| Continuous drain-source diode forward current | IS | 50 | A | |||
| Pulsed drain-source diode forward current | ISM | 180 | A | |||
| Thermal Resistance from Junction to Ambient | RθJA | 40 | °C/W |
2410121715_JSCJ-CJAC50N06_C504091.pdf
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