Low Gate Charge P Channel MOSFET JSCJ CJU40P03 Suitable for Battery Powered and Notebook Applications
Key Attributes
Model Number:
CJU40P03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
40A
RDS(on):
25mΩ@4.5V,15A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
576pF
Number:
1 P-Channel
Output Capacitance(Coss):
770pF
Input Capacitance(Ciss):
4.76nF
Pd - Power Dissipation:
75W
Gate Charge(Qg):
80nC@10V
Mfr. Part #:
CJU40P03
Package:
TO-252-2L
Product Description
Product Overview
The CJU40P03 is a P-Channel Power MOSFET utilizing advanced trench technology and design. It offers excellent RDS(on) with low gate charge, making it suitable for a wide range of applications including power management in notebook computers, portable equipment, and battery-powered systems. Its key features include a reliable and rugged design with a high-density cell for ultra-low on-resistance.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Device Code: U40P03
- Marking: U40P03 = Device code. Solid dot = Green molding compound device. if none, the normal device. XXXX = Code.
- Package: TO-252-2L
- Material: Plastic-Encapsulate MOSFETS
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID =-250A | -30 | V | ||
| Gate-Body Leakage Current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| Gate-Threshold Voltage | VGS(th) | VDS =VGS, ID =-250A | -1 | -1.53 | -2.5 | V |
| Static Drain-Source On-State Resistance | RDS(on) | VGS =-10V, ID =-20A | 10 | 15 | m | |
| Static Drain-Source On-State Resistance | RDS(on) | VGS =-4.5V, ID =-15A | 14 | 25 | m | |
| Zero Gate Voltage Drain Current | IDSS | VDS =-24V, VGS =0V | 1 | A | ||
| Input Capacitance | Ciss | VDS =-15V, VGS=0V, f =1MHz | 2380 | pF | ||
| Output Capacitance | Coss | VDS =-15V, VGS=0V, f =1MHz | 4760 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =-15V, VGS=0V, f =1MHz | 770 | pF | ||
| Total Gate Charge | Qg | VDS=-15V, VGS=-10V, ID=-12A | 40 | nC | ||
| Gate-Source Charge | Qgs | VDS=-15V, VGS=-10V, ID=-12A | 7.5 | nC | ||
| Gate-Drain Charge | Qgd | VDS=-15V, VGS=-10V, ID=-12A | 10 | nC | ||
| Turn-on Delay Time | td(on) | VDD=-15V,VGS=-10V, RG=15, RL=2.5 | 11 | ns | ||
| Turn-on Rise Time | tr | VDD=-15V,VGS=-10V, RG=15, RL=2.5 | 24 | ns | ||
| Turn-off Delay Time | td(off) | VDD=-15V,VGS=-10V, RG=15, RL=2.5 | 35 | ns | ||
| Turn-off Fall Time | tf | VDD=-15V,VGS=-10V, RG=15, RL=2.5 | 10 | ns | ||
| Drain-Source Diode Forward Voltage | VSD | VGS =0V, IS= -1.2 A | -1 | -1.5 | V | |
| Continuous Drain-Source Diode Forward Current | IS | -40 | A | |||
| Pulsed Drain-Source Diode Forward Current | ISM | -160 | A | |||
| Continuous Drain Current | ID | TC=25 | -40 | A | ||
| Pulsed Drain Current | IDM | -160 | A | |||
| Power Dissipation | PD | TC=25 | 100 | W | ||
| Thermal Resistance Junction to Ambient | RJA | 75 | /W | |||
| Thermal Resistance Junction to Case | RJC | 1.67 | /W | |||
| Operating Junction and Storage Temperature Range | TJ ,Tstg | -55 | +150 |
2411121027_JSCJ-CJU40P03_C19268999.pdf
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