Load Switch Dual N Channel MOSFET JSCJ CJCD2007 with Advanced Trench Technology and Low Gate Charge
Key Attributes
Model Number:
CJCD2007
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
17mΩ@2.5V,3A
Gate Threshold Voltage (Vgs(th)):
400mV
Reverse Transfer Capacitance (Crss@Vds):
145pF@10V
Number:
2 N-Channel
Input Capacitance(Ciss):
1.15nF@10V
Pd - Power Dissipation:
-
Gate Charge(Qg):
15nC@4.5V
Mfr. Part #:
CJCD2007
Package:
DFNWB2x3-6L
Product Description
Product Overview
The CJCD2007 is a Dual N-Channel MOSFET from JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It features ESD protection and is suitable for uni-directional or bi-directional load switch applications due to its common-drain configuration.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
- Product Series: CJCD2007
- Package Type: DFNWB23-6L-C
- Material: Plastic-Encapsulate
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | 8 | A | |||
| Pulsed Drain Current | IDM | * | 45 | A | ||
| Thermal Resistance from Junction to Ambient | RθJA | 83.3 | °C/W | |||
| Junction Temperature | Tj | 150 | °C | |||
| Storage Temperature | Tstg | -55 | ~+150 | °C | ||
| Lead Temperature for Soldering Purposes(1/8'' from case for 10 s) | TL | 260 | °C | |||
| STATIC PARAMETERS | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250µA | 20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =16V,VGS = 0V | 1 | µA | ||
| Gate-body leakage current | IGSS | VGS =±4.5V, VDS = 0V | ±1 | µA | ||
| Gate-body leakage current | IGSS | VGS =±8V, VDS = 0V | ±10 | µA | ||
| Gate threshold voltage (note 1) | VGS(th) | VDS =VGS, ID =250µA | 0.4 | 1 | V | |
| Drain-source on-resistance (note 1) | RDS(on) | VGS =4.5V, ID =3A | 12.5 | 15 | mΩ | |
| Drain-source on-resistance (note 1) | RDS(on) | VGS =4.0V, ID =3A | 13.5 | 16 | mΩ | |
| Drain-source on-resistance (note 1) | RDS(on) | VGS =3.8V, ID =3A | 14.5 | 16.5 | mΩ | |
| Drain-source on-resistance (note 1) | RDS(on) | VGS =3.1V, ID =3A | 17 | 18 | mΩ | |
| Drain-source on-resistance (note 1) | RDS(on) | VGS =2.5V, ID =3A | 22 | 23 | mΩ | |
| Forward tranconductance (note 1) | gFS | VDS =5V, ID =7A | 9 | S | ||
| Diode forward voltage(note 1) | VSD | IS=1A, VGS = 0V | 1 | V | ||
| DYNAMIC PARAMETERS (note 2) | ||||||
| Input Capacitance | Ciss | VDS =10V,VGS =0V,f =1MHz | 1150 | pF | ||
| Output Capacitance | Coss | VDS =10V,VGS =0V,f =1MHz | 185 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =10V,VGS =0V,f =1MHz | 145 | pF | ||
| SWITCHING PARAMETERS(note 2) | ||||||
| Turn-on delay time | td(on) | VGS=5V,VDD=10V, RL=1.35Ω,RGEN=3Ω | 6 | ns | ||
| Turn-on rise time | tr | VGS=5V,VDD=10V, RL=1.35Ω,RGEN=3Ω | 13 | ns | ||
| Turn-off delay time | td(off) | VGS=5V,VDD=10V, RL=1.35Ω,RGEN=3Ω | 52 | ns | ||
| Turn-off fall time | tf | VGS=5V,VDD=10V, RL=1.35Ω,RGEN=3Ω | 16 | ns | ||
| Notes: 1. Pulse Test : Pulse width≤300µs, duty cycle≤0.5%. 2. Guaranteed by design, not subject to production testing. | ||||||
2410121715_JSCJ-CJCD2007_C504183.pdf
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