N Channel Power MOSFET JSCJ CJAB25N04A with Excellent Uniformity and Drain Source Breakdown Voltage
Key Attributes
Model Number:
CJAB25N04A
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
25A
RDS(on):
8.4mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
154pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.893nF
Pd - Power Dissipation:
50W
Output Capacitance(Coss):
189pF
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
CJAB25N04A
Package:
PDFNWB3.3x3.3-8L
Product Description
Product Overview
The CJAB25N04A is a high-performance N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications requiring high power and current handling capabilities. Its high-density cell design ensures ultra-low RDS(ON), and it features good stability, uniformity, and excellent heat dissipation.
Product Attributes
- Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.
- Part Number: CJAB25N04A
- Package: PDFNWB3.33.3-8L
- Lead Free: Yes
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID =250A | 40 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =40V, VGS =0V | 1.0 | 8.4 | A | |
| Gate-Body Leakage Current | IGSS | VDS =0V, VGS =20V | 100 | nA | ||
| Gate-Threshold Voltage | VGS(th) | VDS =VGS, ID =250A | 1.0 | 1.8 | 2.5 | V |
| Static Drain-Source On-State Resistance | RDS(on) | VGS =10V, ID =10A | 6.6 | m | ||
| VGS =4.5V, ID =10A | 8.5 | m | ||||
| Input Capacitance | Ciss | VDS =20V,VGS =0V, f =1MHz | 2893 | pF | ||
| Output Capacitance | Coss | 189 | pF | |||
| Reverse Transfer Capacitance | Crss | 154 | pF | |||
| Total Gate Charge | Qg | VGS=10V, VDS=20V, ID=10A | 40 | nC | ||
| 51 | nC | |||||
| 402 | nC | |||||
| Gate-Source Charge | Qgs | VGS=10V, VDS=20V, ID=10A | 116 | nC | ||
| Gate-Drain Charge | Qgd | VGS=10V, VDS=20V, ID=10A | 24 | nC | ||
| Turn-on Delay Time | td(on) | VDS=20V, VGS=10V, RL=2.7 , Rg=10 | 7.3 | ns | ||
| Turn-on Rise Time | tr | 8.2 | ns | |||
| Turn-off Delay Time | td(off) | 40 | ns | |||
| Turn-off Fall Time | tf | 41 | ns | |||
| Drain-Source Diode Forward Voltage | VSD | VGS =0V, IS=10A | 1.2 | V | ||
| Continuous Drain-Source Diode Forward Current | IS | 25 | A | |||
| Pulsed Drain-Source Diode Forward Current | ISM | 100 | A | |||
| Reverse Recovery Time | trr | diS/dt = 100A/s, IS = 13A, VDD = 30V | 23 | ns | ||
| Reverse Recovery Charge | Qrr | diS/dt = 100A/s, IS = 13A, VDD = 30V | 13 | nC |
Applications
- SMPS and general purpose applications
- Hard switched and high frequency circuits
- Uninterruptible Power Supply
- Power management
- Load switch
Absolute Maximum Ratings
| Parameter | Symbol | Limit | Unit |
| Drain-Source Voltage | VDS | 40 | V |
| Gate-Source Voltage | VGS | 20 | V |
| Continuous Drain Current | ID | 25 | A |
| Pulsed Drain Current | IDM | 100 | A |
| Single Pulsed Avalanche Energy | EAS | 137 | mJ |
| Power Dissipation | PD | 50 | W |
| Thermal Resistance from Junction to Ambient | RJA | 83.3 | /W |
| Thermal Resistance from Junction to Case | RJC | 2.5 | /W |
| Operating Junction and Storage Temperature Range | TJ ,TSTG | -55~+150 |
2504101957_JSCJ-CJAB25N04A_C47089384.pdf
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